IHFW40N65R5S数据手册分立半导体产品的晶体管-UGBT、MOSFET-单规格书PDF

特性 Features

优势:
• Best-in-class efficiency, resulting in lower junction and case temperature for higher device reliability
• 50V higher voltage possible for increased reliability
• Performs well in designs with higher switching frequencies up to 40kHz
• No need to use isolation material and thermal grease
• 35% reduction in assembling time compared to standard TO-247 with Iso-foils
• Increased yield eliminating misalignments of isolation foils
• Up to 10°C lower Tc compared to standard TO-247 with isolation material
• Up to 20% Iout increase for higher power output
• Complete manufacturing process control
• Easy paralleling

简介

IHFW40N65R5S属于分立半导体产品的晶体管-UGBT、MOSFET-单。由制造生产的IHFW40N65R5S晶体管 - UGBT、MOSFET - 单单 IGBT（绝缘栅双极晶体管）是一种具有三个端子的多层半导体器件，能够处理大电流，具有快速开关特性。其特征参数包括类型、集射极击穿电压、集电极电流、脉冲集电极电流、VCE(ON)、开关能量和栅极电荷。