650 V, 40 A IGBT in TO-247 advanced isolation package

\n优势:\n• Best-in-class efficiency, resulting in lower junction and case temperature for higher device reliability\n• 50V higher voltage possible for increased reliability\n• Performs well in designs with higher switching frequencies up to 40kHz\n• No need to use isolation material and thermal grease;

Infineon

英飞凌

丝印：H40ER5S；Package：PG-HSIP247-3-2；Reverse-Conducting IGBT in TRENCHSTOPTM 5 technology with monolithic body diode in fully isolated package

文件：1.60333 Mbytes 页数：16 Pages

INFINEON

英飞凌

Package：TO-247-3；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IHFW40N65R5SXKSA1

INFINEON

英飞凌

Reverse conducting IGBT with monolithic body diode

文件：2.13347 Mbytes 页数：15 Pages

INFINEON

英飞凌

high ruggedness and stable temperature behavior

文件：1.96133 Mbytes 页数：15 Pages

INFINEON

英飞凌

Trench Field-Stop IGBT

DESCRIPTION · Low Saturation Voltage:VCE(sat)=1.7V@VGE=15V, IC=40A · High Current Capability · High Input Impedance APPLICATIONS · Uninterrupted Power Supply · Solar Converters · Welding Converters · High Voltage Auxiliaries

文件：363.62 Kbytes 页数：4 Pages

ISC

无锡固电