丝印：IHF；Package：DO-214AB；SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR DIODE

Features Uni- and Bi-Directional Versions Available Excellent Clamping Capability Fast Response Time Classification Rating 94V-O Glass Passivated Die Construction Plastic Case Material has UL Flammability

文件：204.1 Kbytes 页数：5 Pages

SUNMATE

森美特

丝印：H40ER5S；Package：PG-HSIP247-3-2；Reverse-Conducting IGBT in TRENCHSTOPTM 5 technology with monolithic body diode in fully isolated package

文件：1.60333 Mbytes 页数：16 Pages

Infineon

英飞凌

N-CHANNEL POWER MOSFETS

FEATURES ● LOW RDS(on) ● Improved Inductive ruggedness ● Fast switching times ● Rugged polyslllcon gate cell structure ● Low input capacitance ● Extended safe operating area ● Improved high temperature reliability ● TO-3 package(High current)

文件：136.47 Kbytes 页数：3 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

N-CHANNEL POWER MOSFETS

FEATURES ● LOW RDS(on) ● Improved Inductive ruggedness ● Fast switching times ● Rugged polyslllcon gate cell structure ● Low input capacitance ● Extended safe operating area ● Improved high temperature reliability ● TO-3 package(High current)

文件：136.47 Kbytes 页数：3 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司