IGW50N65H5中文资料650 V IGBT in TO-247 package数据手册Infineon规格书

描述 Description

The 650 V, 50 A hard-switching IGBT TRENCHSTOP™ 5 in TO-247 package redefines “Best-in-class” IGBT by providing unmatched performance in terms of efficiency for hard switching applications. This family is a major breakthrough in IGBT innovation to match the market’s high efficiency demands of tomorrow.

特性 Features

• 650 V breakthrough voltage
• Compared to Infineon’s Best-in-class HighSpeed 3 family
• Factor 2.5 lower Qg
• Factor 2 reduction in switching losses
• 200 mV reduction in VCE(sat)
• Low COES/EOSS
• Mild positive temperature coefficient VCE(sat)
• Temperature stability of Vf

优势:
• Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability
• 50 V increase in the bus voltage possible without compromising reliability
• Higher power density design

应用 Application

• 不间断电源(UPS)
• 工业加热和焊接
• 太阳能系统解决方案

简介

IGW50N65H5属于分立半导体产品的晶体管-UGBT、MOSFET-单。由制造生产的IGW50N65H5晶体管 - UGBT、MOSFET - 单单 IGBT（绝缘栅双极晶体管）是一种具有三个端子的多层半导体器件，能够处理大电流，具有快速开关特性。其特征参数包括类型、集射极击穿电压、集电极电流、脉冲集电极电流、VCE(ON)、开关能量和栅极电荷。