IGW25N120H3数据手册分立半导体产品的晶体管-UGBT、MOSFET-单规格书PDF

描述 Description

High speed 1200 V, 25 A single TRENCHSTOP™ IGBT3 in a TO247 package provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-off switching behavior, leading to low turn off losses.

特性 Features

• Designed specifically to replace planar MOSFETs in applications switching at frequencies below 70 kHz
• Low switching losses for high efficiency
• Excellent VCEsatbehavior thanks to the famous Infineon TRENCHSTOP™ technology
• Fast switching behavior with low EMI emissions
• Optimized diode for target applications, meaning further improvement in switching losses
• Low gate resistor selection possible (down to 5Ω) whilst maintaining excellent switching behaviour
• Short circuit capability
• Offering Tj(max)of 175°C
• Packaged with and without freewheeling diode for increased design freedom

优势:
• Low switching and conduction losses
• Very good EMI behavior
• Can be used with a small gate resistor for reduced delay time and voltage overshoot
• High current density
• Best-in-class 1200 V IGBT efficiency and EMI behavior

简介

IGW25N120H3属于分立半导体产品的晶体管-UGBT、MOSFET-单。由制造生产的IGW25N120H3晶体管 - UGBT、MOSFET - 单单 IGBT（绝缘栅双极晶体管）是一种具有三个端子的多层半导体器件，能够处理大电流，具有快速开关特性。其特征参数包括类型、集射极击穿电压、集电极电流、脉冲集电极电流、VCE(ON)、开关能量和栅极电荷。