IGW08T120数据手册分立半导体产品的晶体管-UGBT、MOSFET-单规格书PDF

描述 Description

The 1200 V, 8 A single TRENCHSTOP™ IGBT3 in a TO-247 package, provides significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept. The combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.

特性 Features

• Lowest VCEsatdrop for lower conduction losses
• Low switching losses
• Easy parallel switching capability due to positive temperature coefficient in VCEsat
• Very soft, fast recovery anti-parallel Emitter Controlled HE diode
• High ruggedness, temperature stable behavior
• Low EMI emissions
• Low gate charge
• Very tight parameter distribution

优势:
• Highest efficiency – low conduction and switching losses
• Comprehensive portfolio in 600 V and 1200 V for flexibility of design
• High device reliability

简介

IGW08T120属于分立半导体产品的晶体管-UGBT、MOSFET-单。由制造生产的IGW08T120晶体管 - UGBT、MOSFET - 单单 IGBT（绝缘栅双极晶体管）是一种具有三个端子的多层半导体器件，能够处理大电流，具有快速开关特性。其特征参数包括类型、集射极击穿电压、集电极电流、脉冲集电极电流、VCE(ON)、开关能量和栅极电荷。