丝印：IGP；Package：DO-214AB；Surface Mount Transient Voltage Suppressor Power 4000Watts

FEATURES Peak power dissipation 4000w @10 x 1000 us Pulse Low profile package. Excellent clamping capability. Typical IR less than 2uA when VBR above 12V. Glass passivated junction. Fast response time: typically less than 1.0ps from 0 Volts to BV min IEC 61000-4-2 ESD 30KV(Air), 30KV(Conta

文件：668.54 Kbytes 页数：5 Pages

YFWDIODE

佑风微

丝印：IGP；Package：DO-214AB；SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR DIODE

Features Uni- and Bi-Directional Versions Available Excellent Clamping Capability Fast Response Time Classification Rating 94V-O Glass Passivated Die Construction Plastic Case Material has UL Flammability

文件：204.1 Kbytes 页数：5 Pages

SUNMATE

森美特

丝印：IGP；Package：SMC；SMLJ Transient Voltage Suppressor Diode Series

Features RoHS compliant* Surface Mount SMC package Standoff Voltage: 5.0 to 170 volts Power Dissipation: 3000 watts Typical temperature coefficient: ΔVBR = 0.1 x VBR @ 25 °C x ΔT Applications IEC 61000-4-2 ESD (Min. Level 4) IEC 61000-4-4 EFT IEC 61000-4-5 Surge

文件：182.78 Kbytes 页数：6 Pages

Bourns

伯恩斯

丝印：IGP；Package：DO-214AB；3000W Surface Mount Transient Voltage Suppressors

文件：609.41 Kbytes 页数：4 Pages

BYTESONIC

松浩电子

丝印：G01H1202；Package：PG-TO-220-3-1；HighSpeed 2-Technology

HighSpeed 2-Technology • Designed for: - SMPS - Lamp Ballast - ZVS-Converter - optimised for soft-switching / resonant topologies • 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior - parallel switching

文件：912.52 Kbytes 页数：13 Pages

Infineon

英飞凌

丝印：G03H1202；Package：PG-TO-220-3-1；HighSpeed 2-Technology

• Designed for: - SMPS - Lamp Ballast - ZVS-Converter - optimised for soft-switching / resonant topologies • 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability - tight para

文件：396.67 Kbytes 页数：13 Pages

Infineon

英飞凌

丝印：G10T60；Package：PG-TO-220-3；Low Loss IGBT : IGBT in TRENCHSTOP??and Fieldstop technology

Features:  Very low VCE(sat) 1.5V (typ.)  Maximum Junction Temperature 175°C  Short circuit withstand time 5s  Designed for : - Variable Speed Drive for washing machines and air conditioners - induction cooking - Uninterrupted Power Supply  TRENCHSTOP™ and Fieldstop technology for 60

文件：444.67 Kbytes 页数：12 Pages

Infineon

英飞凌

丝印：G20H603；Package：PG-TO220-3；High speed switching series third generation

High speed IGBT in Trench and Fieldstop technology Features: TRENCHSTOPTM technology offering • very low turn-off energy • low VCEsat • low EMI • maximum junction temperature 175°C • qualified according to JEDEC for target applications • Pb-free lead plating,halogen-free mould compound,RoH

文件：2.11172 Mbytes 页数：14 Pages

Infineon

英飞凌

HighSpeed 2-Technology

HighSpeed 2-Technology • Designed for: - SMPS - Lamp Ballast - ZVS-Converter - optimised for soft-switching / resonant topologies • 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior

文件：390.96 Kbytes 页数：13 Pages

Infineon

英飞凌

HighSpeed 2-Technology

HighSpeed 2-Technology • Designed for: - SMPS - Lamp Ballast - ZVS-Converter - optimised for soft-switching / resonant topologies • 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior - parallel switching

文件：912.52 Kbytes 页数：13 Pages

Infineon

英飞凌