IGB15N65S5

Power-Discrete IGBT without Anti-Parallel Diode; • Very low VCEsatof 1.35V at 25°C, 20% lower than TRENCHSTOP™ 5 H5\n• IC(n)=four times nominal current (100°C Tc)\n• Soft current fall characteristics with no tail current\n• Symmetrical, low voltage overshoot\n• Gate voltage under control (no oscillation). No risk of unwanted turn-on of device and no need for gate clamping\n• Maximum junction temperature Tvj=175°C\n• Qualified according to JEDEC standards\n\n优势:\n• V CE(peak) clamping circuits not required\n• Suitable for use with single turn-on / turn-off gate resistor\n• No need for gate clamping components\n• Gate drivers with Miller clamping not required\n• Reduction in the EMI filtering needed\n• Excellent for paralleling\n;

The 650 V, 15 A high speed switching TRENCHSTOP™ 5 in D2Pak (TO263) package single  IGBT, addressing applications switching between 10 kHz and 40 kHz to deliver high efficiency, faster time-to-market cycles, circuit design complexity reduction and PCB bill of material cost optimization.\n

IGB15N65S5

Marking：G15ES5；Package：PG-TO263-3；High speed switching series fifth generation.

IGB15N65S5ATMA1

包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT PRODUCTS