HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件：415.04 Kbytes 页数：10 Pages

IRF

HEXFET Power MOSFET

Infineon

英飞凌

6A, 100V, 0.600 Ohm, P-Channel Power MOSFET

6A, 100V, 0.600 Ohm, P-Channel Power MOSFET This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are P-Channel enhancement mode silicon gate power field effect transistors designed for applicati

文件：57.96 Kbytes 页数：7 Pages

INTERSIL

Fast Switching

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipati

文件：282.59 Kbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件：283.31 Kbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司