10/100 Industrial Media Converter, SC SM 20KM

文件：329.61 Kbytes 页数：2 Pages

LVL1

Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=4.6A)

IRF1840G -> Correct Partumber IRFI840G 1. Isolated Package 2. High Voltage Isolation = 2.5VKRMS 3. Sink to Lead Creepage Dist = 4.8 mm 4. Low Thermal Resistance

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IRF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. FEATURES • Isolated Package • High Voltage Isolation = 2.5 kVRMS(t = 60 s,f = 60 Hz) • Sink

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VishayVishay Siliconix

威世威世科技公司

HEXFET짰 Power MOSFET

Coming Soon. If you have some information on related parts, please share useful information by adding links below.

文件：1.30688 Mbytes 页数：7 Pages

IRF