IDW12G65C5中文资料采用 real2pin 封装的 650 V 碳化硅肖特基二极管数据手册Infineon规格书

描述 Description

CoolSiC™ generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. Thanks to the more compact design and thinwafer technology, the new family of products shows improved efficiency over all load conditions, resulting from both the improved thermal characteristics and a lower figure of merit (Q c x V f).The new CoolSiC™ Generation 5 has been designed to complement our 650V CoolMOS™ families: this ensures meeting the most stringent application requirements in this voltage range.

特性 Features

• V br at 650V
• Improved figure of merit (Q c x V f)
• No reverse recovery charge
• Soft switching reverse recovery waveform
• Temperature independent switching behavior
• High operating temperature (T j max 175°C)
• Improved surge capability
• Pb-free lead plating

优势:
• Higher safety margin against overvoltage and complements CoolMOS™ offer
• Improved efficiency over all load conditions
• Increased efficiency compared to Silicon Diode alternatives
• Reduced EMI compared to snappier Silicon diode reverse recovery waveform
• Highly stable switching performance
• Reduced cooling requirements
• Reduced risks of thermal runaway
• RoHS compliant
• Very high quality and high volume manufacturing capability

应用 Application

•Telecom/server SMPS
•Solar
•UPS
•PC power
•LED/LCD TV
•Motor drives
•HID lighting

简介

IDW12G65C5属于分立半导体产品的二极管-整流器-单。由制造生产的IDW12G65C5二极管 - 整流器 - 单单整流器二极管系列产品可用于让电流仅沿一个方向流动，并且每个器件封装都恰好实现该功能的一个实例。其他用途的二极管（包括齐纳二极管和可变电容二极管）单独列在各自的产品系列中，每个器件封装中包含多个二极管的产品也是如此。