3.3V CMOS Static RAM 4 Meg (256K x 16-Bit)

Description The IDT71V416 is a 4,194,304-bit high-speed Static RAM organized as 256K x 16. It is fabricated using IDT’s high-perfomance, high-reliability CMOS technology. This state-of-the-art technology, combined with innovative circuit design techniques, provides a cost-effective solution for

文件：84.81 Kbytes 页数：9 Pages

IDT

3.3V CMOS Static RAM 4 Meg (256K x 16-Bit)

Description The IDT71V416 is a 4,194,304-bit high-speed Static RAM organized as 256K x 16. It is fabricated using IDT’s high-perfomance, high-reliability CMOS technology. This state-of-the-art technology, combined with innovative circuit design techniques, provides a cost-effective solution for

文件：84.81 Kbytes 页数：9 Pages

IDT

3.3V CMOS Static RAM 4 Meg (256K x 16-Bit)

Description The IDT71V416 is a 4,194,304-bit high-speed Static RAM organized as 256K x 16. It is fabricated using IDT’s high-perfomance, high-reliability CMOS technology. This state-of-the-art technology, combined with innovative circuit design techniques, provides a cost-effective solution for

文件：84.81 Kbytes 页数：9 Pages

IDT

3.3V CMOS Static RAM 4 Meg (256K x 16-Bit)

Description The IDT71V416 is a 4,194,304-bit high-speed Static RAM organized as 256K x 16. It is fabricated using IDT’s high-perfomance, high-reliability CMOS technology. This state-of-the-art technology, combined with innovative circuit design techniques, provides a cost-effective solution for

文件：84.81 Kbytes 页数：9 Pages

IDT

3.3V CMOS Static RAM 4 Meg (256K x 16-Bit)

Description The IDT71V416 is a 4,194,304-bit high-speed Static RAM organized as 256K x 16. It is fabricated using IDT’s high-perfomance, high-reliability CMOS technology. This state-of-the-art technology, combined with innovative circuit design techniques, provides a cost-effective solution for

文件：84.81 Kbytes 页数：9 Pages

IDT

3.3V CMOS Static RAM 4 Meg (256K x 16-Bit)

Description The IDT71V416 is a 4,194,304-bit high-speed Static RAM organized as 256K x 16. It is fabricated using IDT’s high-perfomance, high-reliability CMOS technology. This state-of-the-art technology, combined with innovative circuit design techniques, provides a cost-effective solution for

文件：84.81 Kbytes 页数：9 Pages

IDT

3.3V CMOS Static RAM 4 Meg (256K x 16-Bit)

Description The IDT71V416 is a 4,194,304-bit high-speed Static RAM organized as 256K x 16. It is fabricated using IDT’s high-perfomance, high-reliability CMOS technology. This state-of-the-art technology, combined with innovative circuit design techniques, provides a cost-effective solution for

文件：84.81 Kbytes 页数：9 Pages

IDT

3.3V CMOS Static RAM 4 Meg (256K x 16-Bit)

Description The IDT71V416 is a 4,194,304-bit high-speed Static RAM organized as 256K x 16. It is fabricated using IDT’s high-perfomance, high-reliability CMOS technology. This state-of-the-art technology, combined with innovative circuit design techniques, provides a cost-effective solution for

文件：84.81 Kbytes 页数：9 Pages

IDT

3.3V CMOS Static RAM 4 Meg (256K x 16-Bit)

Description The IDT71V416 is a 4,194,304-bit high-speed Static RAM organized as 256K x 16. It is fabricated using IDT’s high-perfomance, high-reliability CMOS technology. This state-of-the-art technology, combined with innovative circuit design techniques, provides a cost-effective solution for

文件：84.81 Kbytes 页数：9 Pages

IDT

Package：44-TSOP（0.400"，10.16mm 宽）；包装：管件 类别：集成电路（IC） 存储器 描述：IC SRAM 4MBIT PARALLEL 44TSOP II

Renesas Electronics America Inc