LOW POWER 3.3V CMOS FAST SRAM 256K (32K x 8-BIT)

DESCRIPTION The IDT71V256SA is a 262,144-bit high-speed static RAM organized as 32K x 8. It is fabricated using IDT’s high-performance, high-reliability CMOS technology. FEATURES • Ideal for high-performance processor secondary cache • Commercial (0° to 70°C) and Industrial (-40° to 85°C)

文件：67.97 Kbytes 页数：6 Pages

IDT

LOW POWER 3.3V CMOS FAST SRAM 256K (32K x 8-BIT)

DESCRIPTION The IDT71V256SA is a 262,144-bit high-speed static RAM organized as 32K x 8. It is fabricated using IDT’s high-performance, high-reliability CMOS technology. FEATURES • Ideal for high-performance processor secondary cache • Commercial (0° to 70°C) and Industrial (-40° to 85°C)

文件：67.97 Kbytes 页数：6 Pages

IDT

Lower Power 3.3V CMOS Fast SRAM 256K (32K x 8-Bit)

Features ◆ Ideal for high-performance processor secondary cache ◆ Commercial (0°C to +70°C) and Industrial (–40°C to +85°C) temperature range options ◆ Fast access times: – Commercial and Industrial: 12/15/20ns ◆ Low standby current (maximum): – 2mA full standby ◆ Small packages for space-

文件：190.09 Kbytes 页数：9 Pages

RENESAS

瑞萨

Lower Power 3.3V CMOS Fast SRAM 256K (32K x 8-Bit)

Features ◆ Ideal for high-performance processor secondary cache ◆ Commercial (0°C to +70°C) and Industrial (–40°C to +85°C) temperature range options ◆ Fast access times: – Commercial and Industrial: 12/15/20ns ◆ Low standby current (maximum): – 2mA full standby ◆ Small packages for space-

文件：190.09 Kbytes 页数：9 Pages

RENESAS

瑞萨

Lower Power 3.3V CMOS Fast SRAM

文件：592.58 Kbytes 页数：8 Pages

IDT