Lower Power 3.3V CMOS Fast SRAM 256K (32K x 8-Bit)

Features ◆ Ideal for high-performance processor secondary cache ◆ Commercial (0°C to +70°C) and Industrial (–40°C to +85°C) temperature range options ◆ Fast access times: – Commercial and Industrial: 12/15/20ns ◆ Low standby current (maximum): – 2mA full standby ◆ Small packages for space-

文件：190.09 Kbytes 页数：9 Pages

RENESAS

瑞萨

Lower Power 3.3V CMOS Fast SRAM 256K (32K x 8-Bit)

Features ◆ Ideal for high-performance processor secondary cache ◆ Commercial (0°C to +70°C) and Industrial (–40°C to +85°C) temperature range options ◆ Fast access times: – Commercial and Industrial: 12/15/20ns ◆ Low standby current (maximum): – 2mA full standby ◆ Small packages for space-

文件：190.09 Kbytes 页数：9 Pages

RENESAS

瑞萨

Lower Power 3.3V CMOS Fast SRAM

文件：592.58 Kbytes 页数：8 Pages

IDT

Lower Power 3.3V CMOS Fast SRAM

文件：592.58 Kbytes 页数：8 Pages

IDT

LOW POWER 3.3V CMOS FAST SRAM 256K (32K x 8-BIT)

DESCRIPTION The IDT71V256SA is a 262,144-bit high-speed static RAM organized as 32K x 8. It is fabricated using IDT’s high-performance, high-reliability CMOS technology. FEATURES • Ideal for high-performance processor secondary cache • Commercial (0° to 70°C) and Industrial (-40° to 85°C)

文件：67.97 Kbytes 页数：6 Pages

IDT