3.3V CMOS Static RAM 1 Meg (128K x 8-Bit) Revolutionary Pinout

Description The IDT71V124 is a 1,048,576-bit high-speed static RAM organized as 128K x 8. It is fabricated using IDT’s high-performance, high-reliability CMOS technology. This state-of-the-art technology, combined with innovative circuit design techniques, provides a cost-effective solution for

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IDT

3.3V CMOS Static RAM 1 Meg (128K x 8-Bit) Center Power & Ground Pinout

Description\nThe IDT71V124 is a 1,048,576-bit high-speed static RAM organized as 128K x 8. It is fabricated using IDT’s high-performance, high reliability CMOS technology. This state-of-the-art technology, combined with innovative circuit design techniques, provides a cost effective solution for hig ◆ 128K x 8 advanced high-speed CMOS static RAM\n◆JEDEC revolutionary pinout (center power/GND) for reduced noise\n◆Commercial (0°C  to +70°C) and Industrial (–40°C to +85°C) temperature options\n◆Equal access and cycle times — Industrial and Commercial: 15/20ns\n◆One Chip Select plus one Output Enab;

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3.3V CMOS Static RAM 1 Meg (128K x 8-Bit) Revolutionary Pinout

Description The IDT71V124 is a 1,048,576-bit high-speed static RAM organized as 128K x 8. It is fabricated using IDT’s high-performance, high-reliability CMOS technology. This state-of-the-art technology, combined with innovative circuit design techniques, provides a cost-effective solution for

文件：66.63 Kbytes 页数：8 Pages

IDT

3.3V CMOS Static RAM 1 Meg (128K x 8-Bit) Revolutionary Pinout

Description The IDT71V124 is a 1,048,576-bit high-speed static RAM organized as 128K x 8. It is fabricated using IDT’s high-performance, high-reliability CMOS technology. This state-of-the-art technology, combined with innovative circuit design techniques, provides a cost-effective solution for

文件：66.63 Kbytes 页数：8 Pages

IDT