3.3V CMOS Static RAM 1 Meg (128K x 8-Bit) Center Power & Ground Pinout

Description The IDT71V124 is a 1,048,576-bit high-speed static RAM organized as 128K x 8. It is fabricated using IDT’s high-performance, high-reliability CMOS technology. This state-of-the-art technology, combined with innovative circuit design techniques, provides a cost-effective solution for

文件：81.33 Kbytes 页数：8 Pages

IDT

Package：32-SOIC（0.400"，10.16mm 宽）；包装：管件 类别：集成电路（IC） 存储器 描述：IC SRAM 1MBIT PARALLEL 32TSOP II

Renesas Electronics America Inc

Package：32-SOIC（0.400"，10.16mm 宽）；包装：管件 类别：集成电路（IC） 存储器 描述：IC SRAM 1MBIT PARALLEL 32TSOP II

Renesas Electronics America Inc

3.3V CMOS Static RAM 1 Meg (128K x 8-Bit) Center Power & Ground Pinout

Description The IDT71V124 is a 1,048,576-bit high-speed static RAM organized as 128K x 8. It is fabricated using IDT’s high-performance, high-reliability CMOS technology. This state-of-the-art technology, combined with innovative circuit design techniques, provides a cost-effective solution for

文件：81.33 Kbytes 页数：8 Pages

IDT

3.3V CMOS Static RAM 1 Meg (128K x 8-Bit) Center Power & Ground Pinout

Description The IDT71V124 is a 1,048,576-bit high-speed static RAM organized as 128K x 8. It is fabricated using IDT’s high-performance, high-reliability CMOS technology. This state-of-the-art technology, combined with innovative circuit design techniques, provides a cost-effective solution for

文件：81.33 Kbytes 页数：8 Pages

IDT

3.3V CMOS Static RAM 1 Meg (128K x 8-Bit) Center Power & Ground Pinout

Description The IDT71V124 is a 1,048,576-bit high-speed static RAM organized as 128K x 8. It is fabricated using IDT’s high-performance, high-reliability CMOS technology. This state-of-the-art technology, combined with innovative circuit design techniques, provides a cost-effective solution for

文件：81.33 Kbytes 页数：8 Pages

IDT