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IDT71T75802S133PF

512K x 36, 1M x 18 2.5V Synchronous ZBT??SRAMs 2.5V I/O, Burst Counter Pipelined Outputs

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT71T75802S133PF

包装:托盘 封装/外壳:100-LQFP 类别:集成电路(IC) 存储器 描述:IC SRAM 18MBIT PARALLEL 100TQFP

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

IDT71T75802S133PFI

512K x 36, 1M x 18 2.5V Synchronous ZBT??SRAMs 2.5V I/O, Burst Counter Pipelined Outputs

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT71T75802S133PFI

包装:托盘 封装/外壳:100-LQFP 类别:集成电路(IC) 存储器 描述:IC SRAM 18MBIT PARALLEL 100TQFP

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

IDT71T75802S133PFI8

包装:托盘 封装/外壳:100-LQFP 类别:集成电路(IC) 存储器 描述:IC SRAM 18MBIT PARALLEL 100TQFP

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

71T75802S133BG

2.5VSynchronousZBTSRAMsI/O,BurstCounterPipelinedOutputs

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

71T75802S133BG

512Kx36,1Mx182.5VSynchronousZBT™SRAMs2.5VI/O,BurstCounterPipelinedOutputs

Features ◆512Kx36,1Mx18memoryconfigurations ◆Supportshighperformancesystemspeed-200MHz (3.2nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

71T75802S133BGG

512Kx36,1Mx182.5VSynchronousZBT™SRAMs2.5VI/O,BurstCounterPipelinedOutputs

Features ◆512Kx36,1Mx18memoryconfigurations ◆Supportshighperformancesystemspeed-200MHz (3.2nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

71T75802S133BGG

2.5VSynchronousZBTSRAMsI/O,BurstCounterPipelinedOutputs

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

71T75802S133BGGI

2.5VSynchronousZBTSRAMsI/O,BurstCounterPipelinedOutputs

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

71T75802S133BGGI

512Kx36,1Mx182.5VSynchronousZBT™SRAMs2.5VI/O,BurstCounterPipelinedOutputs

Features ◆512Kx36,1Mx18memoryconfigurations ◆Supportshighperformancesystemspeed-200MHz (3.2nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

71T75802S133BGI

512Kx36,1Mx182.5VSynchronousZBT™SRAMs2.5VI/O,BurstCounterPipelinedOutputs

Features ◆512Kx36,1Mx18memoryconfigurations ◆Supportshighperformancesystemspeed-200MHz (3.2nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

71T75802S133BGI

2.5VSynchronousZBTSRAMsI/O,BurstCounterPipelinedOutputs

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

71T75802S133PFG

2.5VSynchronousZBTSRAMsI/O,BurstCounterPipelinedOutputs

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

71T75802S133PFG

512Kx36,1Mx182.5VSynchronousZBT™SRAMs2.5VI/O,BurstCounterPipelinedOutputs

Features ◆512Kx36,1Mx18memoryconfigurations ◆Supportshighperformancesystemspeed-200MHz (3.2nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

71T75802S133PFGI

512Kx36,1Mx182.5VSynchronousZBT™SRAMs2.5VI/O,BurstCounterPipelinedOutputs

Features ◆512Kx36,1Mx18memoryconfigurations ◆Supportshighperformancesystemspeed-200MHz (3.2nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

71T75802S133PFGI

2.5VSynchronousZBTSRAMsI/O,BurstCounterPipelinedOutputs

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT71T75802S133BG

512Kx36,1Mx182.5VSynchronousZBT??SRAMs2.5VI/O,BurstCounterPipelinedOutputs

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT71T75802S133BGI

512Kx36,1Mx182.5VSynchronousZBT??SRAMs2.5VI/O,BurstCounterPipelinedOutputs

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

产品属性

  • 产品编号:

    IDT71T75802S133PF

  • 制造商:

    Renesas Electronics America Inc

  • 类别:

    集成电路(IC) > 存储器

  • 包装:

    托盘

  • 存储器类型:

    易失

  • 存储器格式:

    SRAM

  • 技术:

    SRAM - 同步,SDR(ZBT)

  • 存储容量:

    18Mb(1M x 18)

  • 存储器接口:

    并联

  • 电压 - 供电:

    2.375V ~ 2.625V

  • 工作温度:

    0°C ~ 70°C(TA)

  • 安装类型:

    表面贴装型

  • 封装/外壳:

    100-LQFP

  • 供应商器件封装:

    100-TQFP(14x14)

  • 描述:

    IC SRAM 18MBIT PARALLEL 100TQFP

供应商型号品牌批号封装库存备注价格
IDT
23+
100-TQFP(14x14)
71890
专业分销产品!原装正品!价格优势!
询价
IDT
23+
100TQFP
9526
询价
IDT
23+
TQFP
1004
全新原装现货
询价
idt
dc0621
原厂封装
65
INSTOCK:72/tray/qfp
询价
IDT
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
IDT
22+
QFP
10000
原装正品优势现货供应
询价
INTDEVTECH
21+
35200
一级代理/放心采购
询价
IDT
20+
QFP-100
1001
就找我吧!--邀您体验愉快问购元件!
询价
IDT
2138+
TQFP
8960
专营BGA,QFP原装现货,假一赔十
询价
IDT
22+
100TQFP
9000
原厂渠道,现货配单
询价
更多IDT71T75802S133PF供应商 更新时间2024-5-24 14:14:00