CMOS Static RAM 1 Meg (64K x 16-Bit)

Description The IDT71016 is a 1,048,576-bit high-speed Static RAM organized as 64K x 16. It is fabricated using IDT’s high-perfomance, high-reliability CMOS technology. This state-of-the-art technology, combined with innovative circuit design techniques, provides a cost-effective solution for hig

文件：482.33 Kbytes 页数：9 Pages

IDT

Package：44-BSOJ（0.400"，10.16mm 宽）；包装：卷带（TR） 类别：集成电路（IC） 存储器 描述：IC SRAM 1MBIT PARALLEL 44SOJ

Renesas Electronics America Inc

Package：44-BSOJ（0.400"，10.16mm 宽）；包装：卷带（TR） 类别：集成电路（IC） 存储器 描述：IC SRAM 1MBIT PARALLEL 44SOJ

Renesas Electronics America Inc

CMOS Static RAM 1 Meg (64K x 16-Bit)

Features ◆ 64K x 16 advanced high-speed CMOS Static RAM ◆ Equal access and cycle times – Commercial : 12/15/20ns – Industrial: 15/20ns ◆ One Chip Select plus one Output Enable pin ◆ Bidirectional data inputs and outputs directly TTLcompatible ◆ Low power consumption via chip deselect ◆ Upp

文件：201.15 Kbytes 页数：10 Pages

RENESAS

瑞萨

CMOS Static RAM 1 Meg (64K x 16-Bit)

Features ◆ 64K x 16 advanced high-speed CMOS Static RAM ◆ Equal access and cycle times – Commercial : 12/15/20ns – Industrial: 15/20ns ◆ One Chip Select plus one Output Enable pin ◆ Bidirectional data inputs and outputs directly TTLcompatible ◆ Low power consumption via chip deselect ◆ Upp

文件：201.15 Kbytes 页数：10 Pages

RENESAS

瑞萨

CMOS Static RAM 1 Meg (64K x 16-Bit)

Features ◆ 64K x 16 advanced high-speed CMOS Static RAM ◆ Equal access and cycle times – Commercial : 12/15/20ns – Industrial: 15/20ns ◆ One Chip Select plus one Output Enable pin ◆ Bidirectional data inputs and outputs directly TTLcompatible ◆ Low power consumption via chip deselect ◆ Upp

文件：201.15 Kbytes 页数：10 Pages

RENESAS

瑞萨