IRF350

N-ChannelPowerMOSFETs,15A,350V/400V

IRF350

N-CHANNELPOWERMOSFETS

FEATURES ●LowRDS(on) ●Improvedinductiveruggedness ●Fastswitchingtimes ●Ruggedpolysilicongatecellstructure ●Lowinputcapacitance ●Extendedsafeoperatingarea ●Improvedhightemperaturereliability ●TO-3package(Standard)

IRF350

15A,400V,0.300Ohm,N-ChannelPowerMOSFET

ThisisanN-Channelenhancementmodesilicongatepowerfieldeffecttransistordesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydrivers,anddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedrivepower. They

IRF350

TRANSISTORSN-CHANNEL(Vdss=400V,Rds(on)=0.300ohm,Id=14A)

TheHEXFET®technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superiorreverseenergyanddi

IRF350

N-CHANNELPOWERMOSFET

IRF350

iscN-ChannelMOSFETTransistor

IRF350

N-CHANNELPOWERMOSFETS

IRFC350

N-ChannelEnhancementModeHighRuggednessSeries

IRFM350

N-CHANNELPOWERMOSFET

IRFM350

POWERMOSFETTHRU-HOLE(TO-254AA)

PartNumberRDS(on)ID IRFM3500.315Ω14A HEXFET®MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance.HEXFETtransis