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IRF250

N-CHANNELPOWERMOSFETS

FEATURES •LowRds(on) •ImprovedInductiveruggedness •Excellenthighvoltagestability •Fastswitchingtimes •Ruggedpolysillcongatecellstructure •LowInputcapacitance •Extendedsafeoperatingarea •Improvedhightemperaturereliability •TO-3package(Highvoltage)

SamsungSamsung semiconductor

三星三星半导体

IRF250

N-CHANNELPOWERMOSFET

SEME-LAB

Seme LAB

IRF250

30A,200V,0.085Ohm,N-ChannelPowerMOSFET

ThisN-Channelenhancementmodesilicongatepowerfieldeffecttransistorisdesigned,testedandguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.TheseMOSFETsaredesignedforapplicationssuchasswitchingregulators,switchingconverters,motor

Intersil

Intersil Corporation

IRF250

iscN-ChannelMOSFETTransistor

DESCRIPTION ·DrainCurrent–ID=30A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.085Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Switchingpowersupplies ·

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRF250

50Wto500WHIGHPOWERWIREWOUNDRESISTORSFLATSHAPEDALUMINUMHOUSED

ETCList of Unclassifed Manufacturers

未分类制造商

IRF250

HighVoltagePowerMOSFETDieN-ChannelEnhancementModeHighRuggednessSeries

FEATURES: •Fastswitchingtimes •LowRDS(on)HDMOS™process •Ruggedpolysilicongatecellstructure •Excellenthighvoltagestability •Lowinputcapacitance •Improvedhightemperaturereliability APPLICATIONS: •Switchingpowersupplies •Motorcontrols •AudioAmplifiers •Invert

IXYS

IXYS Corporation

IRF250

N-CHANNEPOWERMOSFETS

FEATURES •LowRds(on))athighvoltage •ImprovedInductiveruggedness •Excellenthighvoltagestability •Fastswitchingtimes •Ruggedpolysillcongatecellstructure •LowInputcapacitance •Extendedsafeoperatingarea •Improvedhightemperaturereliability •TO-3package(Highv

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

IRF250

N-ChannelPowerMOSFET

DESCRIPTION TheNellIRF250isathree-terminalsilicondevicewithcurrentconductioncapabilityof30A,fastswitchingspeed,lowon-stateresistance,breakdownvoltageratingof200V,andmax.thresholdvoltageof4volts. Theyaredesignedforuseinapplicationssuchasswitchedmodepo

NELLSEMINell Semiconductor Co., Ltd

尼尔半导体尼尔半导体股份有限公司

IRF250SMD

N.CHANNELPOWERMOSFET

FEATURES •HERMETICALLYSEALEDSURFACEMOUNTPACKAGE •SMALLFOOTPRINT–EFFICIENTUSEOFPCBSPACE. •SIMPLEDRIVEREQUIREMENTS •LIGHTWEIGHT •HIGHPACKINGDENSITIES

SEME-LAB

Seme LAB

IRFC250

HighVoltagePowerMOSFETDieN-ChannelEnhancementModeHighRuggednessSeries

FEATURES: •Fastswitchingtimes •LowRDS(on)HDMOS™process •Ruggedpolysilicongatecellstructure •Excellenthighvoltagestability •Lowinputcapacitance •Improvedhightemperaturereliability APPLICATIONS: •Switchingpowersupplies •Motorcontrols •AudioAmplifiers •Invert

IXYS

IXYS Corporation

详细参数

  • 型号:

    IDSR.250T

  • 功能描述:

    保险丝 .25A 600VAC 600VDC Class RK5

  • RoHS:

  • 制造商:

    Littelfuse

  • 产品:

    Surface Mount Fuses

  • 电流额定值:

    0.5 A

  • 电压额定值:

    600 V

  • 保险丝类型:

    Fast Acting

  • 保险丝大小/组:

    Nano

  • 尺寸:

    12.1 mm L x 4.5 mm W

  • 端接类型:

    SMD/SMT

  • 系列:

    485

供应商型号品牌批号封装库存备注价格
Littelfuse(美国力特)
24+
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
询价
LITTELFUSE
24+
con
35960
查现货到京北通宇商城
询价
LITTELFUSE/力特
24+
65200
询价
LITTELFUSE/力特
23+
FUSE
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
LITTELFUSE/力特
23+
7300
专注配单,只做原装进口现货
询价
LITTELFUSE/力特
23+
7300
专注配单,只做原装进口现货
询价
TI
24+
QFN
3660
询价
TI
23+
QFN
5000
原装正品,假一罚十
询价
TI
2020+
QFN
3660
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
TI
23+
QFN
8560
受权代理!全新原装现货特价热卖!
询价
更多IDSR.250T供应商 更新时间2025-6-22 8:14:00