IRF150

HighPower,HighSpeedApplications

DESCRIPTION •DrainCurrentID=40A@TC=25℃ •DrainSourceVoltage- :VDSS=100V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.055Ω(Max) •HighPower,HighSpeedApplications APPLICATIONS •Switchingpowersupplies •UPS •Motorcontrols •Highenergypulsecircuits.

IRF150MPBF

iscN-ChannelMOSFETTransistor

IRF150N

iscN-ChannelMOSFETTransistor

IRF150R

AVALANCHEENERGYRATEDN-CHANNELPOWERMOSFETS

IRF150SMD

N-CHANNELPOWERMOSFET

IRFC150

HIGHVOLTAGEPOWERMOSFETDIE

FEATURES: ●Fastswitchingtimes ●LOWRDS(on)HDMOS™process ●Ruggedpolyslllcongatecellstructure ●Excellenthighvoltagestability ●Lowinputcapacitance ●Improvedhightemperaturereliability APPLICATIONS ●Switchingpowersupplies ●Motorcontrols ●AudioAmplifiers ●Inver

IRFM150

REPETITIVEAVALANCHERATEDANDdv/dtRATED

REPETITIVEAVALANCHERATEDANDdv/dtRATEDHEXFETTRNANSISTOR 100Volt,0.07OhmHEXFET

IRFM150

N-CHANNELPOWERMOSFET

IRFM150

SimpleDriveRequirements

IRFN150

POWERMOSFETN-CHANNEL(BVdss=100V,Rds(on)=0.060ohm,Id=34A)

RDS(on)0.07Ω ID34A HEXFET®MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance.HEXFETtransistorsalsofeatureallofthewell-establis