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IDH04S60C

2ndGenerationthinQ!TMSiCSchottkyDiode

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IDT04S60C

2ndGenerationthinQSiCSchottkyDiode

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IDT04S60C

2ndGenerationthinQSiCSchottkyDiode

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IDV04S60C

2ndGenerationthinQ!SiCSchottkyDiode

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

SDD04S60

SiliconCarbideSchottkyDiode

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

SDD04S60

SiliconCarbideSchottkyDiode

SiliconCarbideSchottkyDiode •Worldsfirst600VSchottkydiode •Revolutionarysemiconductormaterial-SiliconCarbide •Switchingbehaviorbenchmark •Noreverserecovery •Notemperatureinfluenceontheswitchingbehavior •IdealdiodeforPowerFactorCorrectionupto800W1) •Nofo

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

SDP04S60

SiliconCarbideSchottkyDiode

SiliconCarbideSchottkyDiode •Worldsfirst600VSchottkydiode •Revolutionarysemiconductormaterial-SiliconCarbide •Switchingbehaviorbenchmark •Noreverserecovery •Notemperatureinfluenceontheswitchingbehavior •IdealdiodeforPowerFactorCorrectionupto800W1) •Nofo

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

SDP04S60

SiliconCarbideSchottkyDiode

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

SDT04S60

SiliconCarbideSchottkyDiode

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

SDT04S60

SiliconCarbideSchottkyDiode

SiliconCarbideSchottkyDiode •Worldsfirst600VSchottkydiode •Revolutionarysemiconductormaterial-SiliconCarbide •Switchingbehaviorbenchmark •Noreverserecovery •Notemperatureinfluenceontheswitchingbehavior •IdealdiodeforPowerFactorCorrectionupto800W1) •Nofo

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

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