首页 >ICS512MLFT模块>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
LOCO??PLLClockMultiplier | ICST Integrated Circuit Systems | ICST | ||
WIDEBANDWIDTHVIDEOSIGNALSWITCH,5PORT GeneralDescription TheIDTVS512isabi-directional5-Port2:1multiplexer/demultiplexerwithHi-ZoutputsforbothRGBandcompositevideoswitchingapplications.Withtheadditionaltwoports,verticalandhorizontalsynchronoussignalscanbeswitchedinadditiontoswitchingtheRGBandcomp | IDT Integrated Device Technology, Inc. | IDT | ||
WIDEBANDWIDTHVIDEOSIGNALSWITCH,5PORT GeneralDescription TheIDTVS512isabi-directional5-Port2:1multiplexer/demultiplexerwithHi-ZoutputsforbothRGBandcompositevideoswitchingapplications.Withtheadditionaltwoports,verticalandhorizontalsynchronoussignalscanbeswitchedinadditiontoswitchingtheRGBandcomp | IDT Integrated Device Technology, Inc. | IDT | ||
WIDEBANDWIDTHVIDEOSIGNALSWITCH,5PORT GeneralDescription TheIDTVS512isabi-directional5-Port2:1multiplexer/demultiplexerwithHi-ZoutputsforbothRGBandcompositevideoswitchingapplications.Withtheadditionaltwoports,verticalandhorizontalsynchronoussignalscanbeswitchedinadditiontoswitchingtheRGBandcomp | IDT Integrated Device Technology, Inc. | IDT | ||
N-ChannelJFET Features •InterFETN0026Geometry •LowNoise:3nV/√HzTypical •LowCiss:5.0pFMaximum •LowLeakage:10pATypical •RoHSCompliant •SMT,TH,andBareDiePackageoptions. Applications •LowNoiseHighGain •ReplacementforBF512andBF513 •Mixers •Oscillators •VHFAmplifier | InterFET InterFET Corporation | InterFET | ||
FULLYPROTECTEDHIGHSIDEPOWERMOSFETSWITCH Description TheIPS511G/IPS512Garefullyprotectedfiveterminalhighsideswitcheswithbuiltinshort-circuit,over-temperature,ESDprotection,inductiveloadcapabilityanddiagnosticfeedback.TheoutputcurrentiscontrolledwhenitreachesIlimvalue.Thecurrentlimitationisactivated | IRF International Rectifier | IRF | ||
N-ChannelPowerMOSFETs,5.5A,60-100V N-ChannelPowerMOSFETs,5.5A,60-100V | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
N-ChannelEnhancement-ModeVerticalDMOSPowerFETs N-ChannelEnhancement-ModeVerticalDMOSPowerFETs | SUTEX Supertex, Inc | SUTEX | ||
4.9A,and5.6A,80Vand100V,0.54and0.74Ohm,N-ChannelPowerMOSFETs Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplica | HARRIS Harris Corporation | HARRIS | ||
iscN-ChannelMosfetTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC |
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