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IRF252

HighVoltagePowerMOSFETDieN-ChannelEnhancementModeHighRuggednessSeries

FEATURES: •Fastswitchingtimes •LowRDS(on)HDMOS™process •Ruggedpolysilicongatecellstructure •Excellenthighvoltagestability •Lowinputcapacitance •Improvedhightemperaturereliability APPLICATIONS: •Switchingpowersupplies •Motorcontrols •AudioAmplifiers •Invert

IXYS

IXYS Corporation

IRF252

N-CHANNEPOWERMOSFETS

FEATURES •LowRds(on))athighvoltage •ImprovedInductiveruggedness •Excellenthighvoltagestability •Fastswitchingtimes •Ruggedpolysillcongatecellstructure •LowInputcapacitance •Extendedsafeoperatingarea •Improvedhightemperaturereliability •TO-3package(Highv

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

IRF252

N-CHANNELPOWERMOSFETS

FEATURES •LowRds(on))athighvoltage •ImprovedInductiveruggedness •Excellenthighvoltagestability •Fastswitchingtimes •Ruggedpolysillcongatecellstructure •LowInputcapacitance •Extendedsafeoperatingarea •Improvedhightemperaturereliability •TO-3package(Highv

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

IRF252

NanosecondSwitchingSpeed

DESCRIPTION •DrainCurrentID=25A@TC=25℃ •DrainSourceVoltage:VDSS=200V(Min) •StaticDrain-SourceOn-Resistance:RDS(on)=0.12Ω(Max) •NanosecondSwitchingSpeed APPLICATIONS •Switchingpowersupplies •Switchingconverters,motordriver,relaydriver

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRFP252

N-ChannelPowerMosfets

SamsungSamsung semiconductor

三星三星半导体

IRFP252

N-Channel(HexfetTransistors)

IRF

International Rectifier

IRFP252

HighVoltagePowerMOSFETDieN-ChannelEnhancementModeHighRuggednessSeries

FEATURES: •Fastswitchingtimes •LowRDS(on)HDMOS™process •Ruggedpolysilicongatecellstructure •Excellenthighvoltagestability •Lowinputcapacitance •Improvedhightemperaturereliability APPLICATIONS: •Switchingpowersupplies •Motorcontrols •AudioAmplifiers •Invert

IXYS

IXYS Corporation

IRFP252

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRFS252

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRFS252

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=17.3A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.12Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

产品属性

  • 产品编号:

    ICS252PMT

  • 制造商:

    Renesas Electronics America Inc

  • 类别:

    集成电路(IC) > 时钟发生器,PLL,频率合成器

  • 系列:

    VersaClock®

  • 包装:

    卷带(TR)

  • 类型:

    时钟/频率合成器,扇出配送,扩展频谱时钟发生器

  • PLL:

    带旁路

  • 输入:

    时钟,晶体

  • 输出:

    CMOS

  • 比率 - 输入:

    1:2

  • 差分 - 输入:

    无/无

  • 频率 - 最大值:

    200MHz

  • 分频器/倍频器:

    是/是

  • 电压 - 供电:

    3.135V ~ 3.465V

  • 工作温度:

    0°C ~ 70°C

  • 安装类型:

    表面贴装型

  • 封装/外壳:

    8-SOIC(0.154",3.90mm 宽)

  • 供应商器件封装:

    8-SOIC

  • 描述:

    IC CLK SYNTHESIZER FP DUAL 8SOIC

供应商型号品牌批号封装库存备注价格
IDT, Integrated Device Technol
24+
8-SOIC
56200
一级代理/放心采购
询价
IDT
20+
SOP-8
1001
就找我吧!--邀您体验愉快问购元件!
询价
IDT
22+
8SOIC
9000
原厂渠道,现货配单
询价
IDT
23+
8SOIC
9000
原装正品,支持实单
询价
IDT
25+
SOP8
880000
明嘉莱只做原装正品现货
询价
Renesas Electronics America In
25+
8-SOIC(0.154 3.90mm 宽)
9350
独立分销商 公司只做原装 诚心经营 免费试样正品保证
询价
ICST
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
ICS
23+
SOP20
4000
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、
询价
ICS
24+/25+
850
原装正品现货库存价优
询价
05+
原厂原装
4366
只做全新原装真实现货供应
询价
更多ICS252PMT供应商 更新时间2025-7-29 10:04:00