IRF252

N-CHANNELPOWERMOSFETS

FEATURES •LowRds(on))athighvoltage •ImprovedInductiveruggedness •Excellenthighvoltagestability •Fastswitchingtimes •Ruggedpolysillcongatecellstructure •LowInputcapacitance •Extendedsafeoperatingarea •Improvedhightemperaturereliability •TO-3package(Highv

IRF252

NanosecondSwitchingSpeed

DESCRIPTION •DrainCurrentID=25A@TC=25℃ •DrainSourceVoltage:VDSS=200V(Min) •StaticDrain-SourceOn-Resistance:RDS(on)=0.12Ω(Max) •NanosecondSwitchingSpeed APPLICATIONS •Switchingpowersupplies •Switchingconverters,motordriver,relaydriver

IRFP252

N-ChannelPowerMosfets

IRFP252

N-Channel(HexfetTransistors)

IRFP252

HighVoltagePowerMOSFETDieN-ChannelEnhancementModeHighRuggednessSeries

FEATURES: •Fastswitchingtimes •LowRDS(on)HDMOS™process •Ruggedpolysilicongatecellstructure •Excellenthighvoltagestability •Lowinputcapacitance •Improvedhightemperaturereliability APPLICATIONS: •Switchingpowersupplies •Motorcontrols •AudioAmplifiers •Invert

IRFP252

iscN-ChannelMOSFETTransistor

IRFS252

iscN-ChannelMOSFETTransistor

IRFS252

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=17.3A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.12Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCN252I

iscSiliconNPNPowerTransistor

KBPC252

TECHNICALSPECIFICATIONSOFSINGLE-PHASESILICONBRIDGERECTIFIER

VOLTAGERANGE-50to1000VoltsCURRENT-25Amperes FEATURES *MetalcaseforMaximumHeatDissipation *Surgeoverloadratings-400Amperes *Lowforwardvoltagedrop