IRFP251

HighVoltagePowerMOSFETDieN-ChannelEnhancementModeHighRuggednessSeries

FEATURES: •Fastswitchingtimes •LowRDS(on)HDMOS™process •Ruggedpolysilicongatecellstructure •Excellenthighvoltagestability •Lowinputcapacitance •Improvedhightemperaturereliability APPLICATIONS: •Switchingpowersupplies •Motorcontrols •AudioAmplifiers •Invert

IRFP251

iscN-ChannelMOSFETTransistor

IRFS251

iscN-ChannelMOSFETTransistor

IRFS251

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=20.7A@TC=25℃ ·DrainSourceVoltage-VDSS=150V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=85mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCNH251D

iscN-ChannelMOSFETTransistor

KBPC251

TECHNICALSPECIFICATIONSOFSINGLE-PHASESILICONBRIDGERECTIFIER

VOLTAGERANGE-50to1000VoltsCURRENT-25Amperes FEATURES *MetalcaseforMaximumHeatDissipation *Surgeoverloadratings-400Amperes *Lowforwardvoltagedrop

KDV251

VARIABLECAPACITANCEDIODESILICONEPITAXIALPLANARDIODE(VCOFORCB,C/PPLL)

VCOFORC/P,CBPLL FEATURES •LowSeriesResistance:0.6Ω(Max.) •HighCapacitanceRatio:1.7(Min.)~2.2(Max.)

KDV251M

VARIABLECAPACITANCEDIODESILICONEPITAXIALPLANARDIODE(VCOFORCB,C/PPLL)

VCOFORC/P,CBPLL FEATURES •LowSeriesResistance:0.6Ω(Max.) •HighCapacitanceRatio:1.7(Min.)~2.2(Max.)

KDV251M

SILICONEPITAXIALPLANARDIODE

KDV251S

SOT-23PACKAGE

VCOFORC/P,CBPLL FEATURES •LowSeriesResistance:0.6Ω(Max.) •HighCapacitanceRatio:1.7(Min.)~2.2(Max.)