P-CHANNEL JFET

GENERAL INFORMATION/CROSS REFERENCES

文件：4.13074 Mbytes 页数：122 Pages

INTERSIL

HEXFET Power MOSFET

Description New trench HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer wi

文件：178.9 Kbytes 页数：9 Pages

IRF

-40V P-Channel MOSFET

Features • VDS (V) = -40V • ID = -6.2A(VGS = -10V) • RDS(ON)

文件：983.69 Kbytes 页数：9 Pages

EVVOSEMI

翊欧

HEXFET Power MOSFET

Description New trench HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer wi

文件：170.78 Kbytes 页数：9 Pages

IRF