IC63LV1024-10T资料datasheet下载贸易商-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
IC63LV1024-10T	文件：133.4 Kbytes Page：10 Pages	128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT 文件：133.4 Kbytes 页数：10 Pages	ICSI	ICSI
IC63LV1024-10TI	文件：133.4 Kbytes Page：10 Pages	128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT 文件：133.4 Kbytes 页数：10 Pages	ICSI	ICSI
IS63LV1024-10J	文件：68.79 Kbytes Page：8 Pages	128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT DESCRIPTION The ISSIIS63LV1024/IS63LV1024L is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM in revolutionary pinout. The IS63LV1024/IS63LV1024L is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design t 文件：68.79 Kbytes 页数：8 Pages	ISSI 矽成半导体	ISSI
IS63LV1024-10J	文件：614.95 Kbytes Page：18 Pages	128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT 文件：614.95 Kbytes 页数：18 Pages	ISSI 矽成半导体	ISSI
IS63LV1024-10JI	文件：68.79 Kbytes Page：8 Pages	128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT DESCRIPTION The ISSIIS63LV1024/IS63LV1024L is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM in revolutionary pinout. The IS63LV1024/IS63LV1024L is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design t 文件：68.79 Kbytes 页数：8 Pages	ISSI 矽成半导体	ISSI

更多IC63LV1024-10T供应商更新时间2025-10-11 11:22:00