512K x 16 Bit x 2 Banks (16-MBIT) SDRAM

文件：759.65 Kbytes 页数：78 Pages

ICSI

512K x 16 Bit x 2 Banks (16-MBIT) SDRAM

文件：759.65 Kbytes 页数：78 Pages

ICSI

512K x 16 Bit x 2 Banks (16-MBIT) SDRAM

文件：759.65 Kbytes 页数：78 Pages

ICSI

512K x 16 Bit x 2 Banks (16-MBIT) SDRAM

文件：759.65 Kbytes 页数：78 Pages

ICSI

512K x 16 Bit x 2 Banks (16-MBIT) SDRAM

文件：759.65 Kbytes 页数：78 Pages

ICSI

512K x 16 Bit x 2 Banks (16-MBIT) SDRAM

文件：759.65 Kbytes 页数：78 Pages

ICSI

512K x 16 Bit x 2 Banks (16-MBIT) SDRAM

文件：759.65 Kbytes 页数：78 Pages

ICSI

512K x 16 Bit x 2 Banks (16-MBIT) SDRAM

文件：759.65 Kbytes 页数：78 Pages

ICSI

512K x 16 Bit x 2 Banks (16-MBIT) SDRAM

文件：759.65 Kbytes 页数：78 Pages

ICSI

512K x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM

DESCRIPTION\nICSI's 16Mb Synchronous DRAM IC42S16101 is organized as a 524,288-word x 16-bit x 2-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input.FEATURES\n• D • Drive Strength for low capacitive bus loading\n• Clock frequency: 200, 166, 143 MHz\n• Fully synchronous; all signals referenced to a positive clock edge\n• Two banks can be operated simultaneously and independently\n• Dual internal bank controlled by A11 (bank select)\n• Single 3.3V power supply\;

ISSI

矽成半导体