4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM

DESCRIPTION The IC42S81600 and IC42S16800 are high-speed 134,217,728-bit synchronous dynamic randomaccess memories, organized as 4,194,304 x 8 x 4 and 2,097,152 x 16 x 4 (word x bit x bank), respectively. FEATURES • Single 3.3V (± 0.3V) power supply • High speed clock cycle time -6: 166MHz, -7

文件：1.11877 Mbytes 页数：69 Pages

ICSI

4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM

DESCRIPTION The IC42S81600 and IC42S16800 are high-speed 134,217,728-bit synchronous dynamic randomaccess memories, organized as 4,194,304 x 8 x 4 and 2,097,152 x 16 x 4 (word x bit x bank), respectively. FEATURES • Single 3.3V (± 0.3V) power supply • High speed clock cycle time -6: 166MHz, -7

文件：1.11877 Mbytes 页数：69 Pages

ICSI

4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM

ISSI

矽成半导体

iC-Haus
DFN6

IC-Haus

上传：深圳市中联芯电子有限公司

iC-Haus
DFN-6

IC-Haus

上传：深圳市中联芯电子有限公司