IC42S16100-5T中文资料512K x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM数据手册ISSI规格书

描述 Description

DESCRIPTION
ICSI's 16Mb Synchronous DRAM IC42S16100 is organized as a 524,288-word x 16-bit x 2-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input.FEATURES
• Clock frequency: 200, 166, 143 MHz
• Fully synchronous; all signals referenced to a positive clock edge
• Two banks can be operated simultaneously and independently
• Dual internal bank controlled by A11 (bank select)
• Single 3.3V power supply
• LVTTL interface
• Programmable burst length
  – (1, 2, 4, 8, full page)
• Programmable burst sequence: Sequential/Interleave
• Auto refresh, self refresh
• 4096 refresh cycles every 64 ms
• Random column address every clock cycle
• Programmable CASlatency (2, 3 clocks)
• Burst read/write and burst read/single write operations capability
• Burst termination by burst stop and precharge command
• Byte controlled by LDQM and UDQM
• Package 400mil 50-pin TSOP-2
• Pb(lead)-free package is available

特性 Features

• Clock frequency: 200, 166, 143 MHz
• Fully synchronous; all signals referenced to a positive clock edge
• Two banks can be operated simultaneously and independently
• Dual internal bank controlled by A11 (bank select)
• Single 3.3V power supply
• LVTTL interface
• Programmable burst length
  – (1, 2, 4, 8, full page)
• Programmable burst sequence: Sequential/Interleave
• Auto refresh, self refresh
• 4096 refresh cycles every 64 ms
• Random column address every clock cycle
• Programmable CASlatency (2, 3 clocks)
• Burst read/write and burst read/single write operations capability
• Burst termination by burst stop and precharge command
• Byte controlled by LDQM and UDQM
• Package 400mil 50-pin TSOP-2
• Pb(lead)-free package is available