IC41LV1664-35K中文资料64K x 16 (1-MBIT) DYNAMIC RAM WITH EDO PAGE MODE数据手册ISSI规格书

描述 Description

DESCRIPTION
TheICSI IC41C1664 and IC41LV1664 is a 65,536 x 16-bit high performance CMOS Dynamic Random Access Memories. The IC41C1664 offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 256 random accesses within a single row with access cycle time as short as 10 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes the IC41C1664 ideal for use in 16-, 32-bit wide data bus systems.
These features make the IC41C1664 and IC41LV1664 ideally suited for high-bandwidth graphics, digital signal processing, high-performance computing systems, and peripheral applications.
The IC41C1664 is packaged in a 40-pin 400mil SOJ and 400mil TSOP-2.FEATURES
• Extended Data-Out (EDO) Page Mode access cycle
• TTL compatible inputs and outputs; tristate I/O
• Refresh Interval: 256 cycles /4 ms
• Refresh Mode: RAS-Only, CAS-before-RAS (CBR), Hidden
• Single power supply:
   5V ± 10% (IC41C1664)
   3.3V ± 10% (IC41LV1664)
• Byte Write and Byte Read operation via two CAS
• Industrail Temperature Range -40°C to 85°C

特性 Features

• Extended Data-Out (EDO) Page Mode access cycle
• TTL compatible inputs and outputs; tristate I/O
• Refresh Interval: 256 cycles /4 ms
• Refresh Mode: RAS-Only, CAS-before-RAS (CBR), Hidden
• Single power supply:
   5V ± 10% (IC41C1664)
   3.3V ± 10% (IC41LV1664)
• Byte Write and Byte Read operation via two CAS
• Industrail Temperature Range -40°C to 85°C