触控芯片

发射电压高达18V，10点触控，FPS137，首点报点延迟25ms；优秀的线性度，支持纳米银、ITO、Metalmesh、打印金属网格的全贴合及零贴合，底层协议可开放。 Maximum 64 configurable Tx/Rx sensing channels.\r\nBuild-in RX sensing block for Mutual Capacitive Sensing.\r\nBuild-in 10 bits ADCx4 and 8 bits DACx4.\r\nBuild-in 4K byte SRAM x 2.\r\nSampling rate > 100Hz (up to 400Hz base on recipe setting).\r\nBuffer: 64-bytes for ADC (raw data) and 64-bytes for;

CHUYU

触宇

Power MOSFET(Vdss=-40V)

Description These P-channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applicati

文件：109.38 Kbytes 页数：9 Pages

IRF

Ultra Low On-Resistance

文件：302.1 Kbytes 页数：10 Pages

Infineon

英飞凌

Ultra Low On-Resistance

Description These P-channel HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applicatio

文件：207.68 Kbytes 页数：9 Pages

IRF