IAV204中文资料InGaAs APDs数据手册GPD规格书

描述 Description

InGaAs avalanche photodiodes are used in situations where more sensitivity is needed than is achievable with standard photodiodes. These devices use an internal gain mechanism to generate secondary electrons via impact ionization. This in turn sets off an electron avalanche which amplifies the initial signal for easier measurement. APDs are often used in applications having very low signal levels, such as LiDAR or optical communication.

特性 Features

Chip active diameters from 80 μm to 350 μm
Spectral response from 900 nm to 1650 nm
Linear operation
Low dark current for high sensitivity
Low capacitance for high speed
Fiber pigtail available (single-mode or multi-mode)
Package flexibility (TO packages

应用 Application

LiDAR
Free space optics
High-sensitivity photometry
Optical time domain reflectometer (OTDR)
Optical communication