IAUCN04S7N005

丝印：7N04N005；Package：PG-TDSON-8-43；OptiMOS™ 7 Power-Transistor

Features •OptiMOS™powerMOSFETforautomotiveapplications •N-channel–Enhancementmode–NormalLevel •ExtendedqualificationbeyondAEC-Q101 •Enhancedelectricaltesting •Robustdesign •MSL1upto260°Cpeakreflow •175°Coperatingtemperature •RoHScompliant •100Avalanchet

IAUCN04S7N005

车规级MOSFET; \n优势:\n• High power efficiency\n• Increased design ruggedness for easy design\n• Optimized switching performance\n• Small footprint & efficient cooling\n• High quality product design for Automotive\n• High quality FE&BE production for Automotive\n;

IAUAN04S7N005

AutomotiveMOSFETOptiMOSTM7Power-Transistor

Features •OptiMOSTMpowerMOSFETforautomotiveapplications •N-channel-Enhancementmode-NormalLevel •ExtendedqualificationbeyondAEC-Q101 •Enhancedelectricaltesting •Robustdesign •MSL2aupto260°Cpeakreflow •175°Coperatingtemperature •RoHScompliant •100Avalanche

IAUMN04S7N005G

OptiMOSTM7Power-Transistor

Features •OptiMOSTMpowerMOSFETforautomotiveapplications •N-channel-Enhancementmode-NormalLevel •ExtendedqualificationbeyondAEC-Q101 •Enhancedelectricaltesting •Robustdesign •MSL2upto260°Cpeakreflow •175°Coperatingtemperature •RoHScompliant •100%Avala

IAUS300N08S5N014

INFINEON/英飞凌
PG-HSOG-8

ETC