IRFP140

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247ACpackageispreferredfor commercial-industrialapplicationswherehigherpowerlevelspreclud

IRFP140

PowerMOSFET

IRFP140

iscN-ChannelMOSFETTransistor

DESCRIPTION •Designedforapplicationsuchasswitchingregulators,switchingconvertors,motordriversandsoon. FEATURES •DrainCurrent–ID=31A@TC=25℃ •DrainSourceVoltage- :VDSS=100V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.077Ω(Max) •SOAispowerdissipati

IRFP140

PowerMOSFET

IRFP140

PowerMOSFET

FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Isolatedcentralmountinghole •175°Coperatingtemperature •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Not

IRFP140A

AdvancedPowerMOSFET

FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■175°COperatingTemperature ■LowerLeakageCurrent:10μA(Max.)@VDS=100V ■LowerRDS(ON):0.041Ω(Typ.)

IRFP140A

iscN-ChannelMOSFETTransistor

IRFP140N

PowerMOSFET(Vdss=100V,Rds(on)=0,052ohm,Id=33A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p

IRFP140N

33A,100V,0.040Ohm,N-ChannelPowerMOSFET

Features •UltraLowOn-Resistance -rDS(ON)=0.040Ω,VGS=10V •SimulationModels -TemperatureCompensatedPSPICE™andSABER©ElectricalModels -SpiceandSABER©ThermalImpedanceModels -www.intersil.com •PeakCurrentvsPulseWidthCurve •UISRatingCurve

IRFP140N

N-ChannelMOSFETTransistor