丝印：I60N10；Package：TO-262；60A 100V N-channel Enhancement Mode Power MOSFET

文件：719.21 Kbytes 页数：10 Pages

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东海半导体

丝印：I60N10；Package：TO-262；60A 100V N-channel Enhancement Mode Power MOSFET

文件：715.16 Kbytes 页数：10 Pages

WXDH

东海半导体

丝印：I60N10；Package：TO-262；60A 100V N-channel Enhancement Mode Power MOSFET

文件：714.02 Kbytes 页数：10 Pages

WXDH

东海半导体

丝印：I600A；Package：SOT-23(DBV)；INA600 Low-Power, 2.7V to 40V Attenuating Difference Amplifier With 1MΩ>>1MΩ Input Impedance for Cost-Optimized Designs

1 Features • Ultra-high input impedance: >1MΩ • Supply range: 2.7V (±1.35V) to 40V (±20V) • Input voltage range: (V–) – 40V to (V–) + 85V • Precision voltage monitoring in noisy systems: – CMRR: 100dB (typical, G = 1/5) – Gain error: ±0.01% (typical) – Gain drift : ±1ppm/°C (typical) •

文件：2.76508 Mbytes 页数：39 Pages

TI

德州仪器

丝印：I600B；Package：SOT-23(DBV)；INA600 Low-Power, 2.7V to 40V Attenuating Difference Amplifier With 1MΩ>>1MΩ Input Impedance for Cost-Optimized Designs

1 Features • Ultra-high input impedance: >1MΩ • Supply range: 2.7V (±1.35V) to 40V (±20V) • Input voltage range: (V–) – 40V to (V–) + 85V • Precision voltage monitoring in noisy systems: – CMRR: 100dB (typical, G = 1/5) – Gain error: ±0.01% (typical) – Gain drift : ±1ppm/°C (typical) •

文件：2.76508 Mbytes 页数：39 Pages

TI

德州仪器

丝印：I600F；Package：SOT-23(DBV)；INA600 Low-Power, 2.7V to 40V Attenuating Difference Amplifier With 1MΩ>>1MΩ Input Impedance for Cost-Optimized Designs

1 Features • Ultra-high input impedance: >1MΩ • Supply range: 2.7V (±1.35V) to 40V (±20V) • Input voltage range: (V–) – 40V to (V–) + 85V • Precision voltage monitoring in noisy systems: – CMRR: 100dB (typical, G = 1/5) – Gain error: ±0.01% (typical) – Gain drift : ±1ppm/°C (typical) •

文件：2.76508 Mbytes 页数：39 Pages

TI

德州仪器

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ILSI

包装：袋 类别：盒子，外壳，机架 箱 描述：BOX JNCTN CLR/GRY 17.8X16.3X4.2\

SERPAC