丝印：I4；SAW Bandpass Filters | GNSS Receiver

Features  1580 MHz center frequency  Miniature ceramic package (1.4 x 1.1) for Surface Mounted Technology  Low Insertion Loss: 1.3 dB typical value within PassBand Width 1574.42 to 1576.42 MHz  Narrow and sharp Passband characteristics  No matching network required for operation at 50 Ω

文件：951.51 Kbytes 页数：7 Pages

RAKON

丝印：I4230；Package：DSBGA；INA4230 48V, Quad Channel, 16-Bit, Current, Voltage, Power, and Energy Monitor With an I2C Interface

1 Features • High-side or low-side current sensing • Operates from a 1.7V to 5.5V power supply • Reports current, voltage, power, and energy • Programmable full scale range: 20mV / 80mV • Input common mode range: –0.3V to 48V • Current monitoring accuracy: – 16-bit ADC resolution – 0.75

文件：1.4595 Mbytes 页数：38 Pages

TI

德州仪器

丝印：I4235；Package：DSBGA；INA4235 48V, Quad Channel, 16-Bit, Ultra - Precise, Current, Voltage, Power, and Energy Monitor With an I2C Interface

1 Features • High-side or low-side current sensing • Operates from a 1.7V to 5.5V power supply • Reports current, voltage, power, and energy • Programmable full scale range: 20mV / 80mV • Input common mode range: –0.3V to 48V • Current monitoring accuracy: – 16-bit ADC resolution – 0.1%

文件：1.52728 Mbytes 页数：43 Pages

TI

德州仪器

丝印：I4F；Package：QFN(RUC)；OPAx991 40-V Rail-to-Rail Input/Output, Low Offset Voltage, Low Noise Op Amp

1 Features • Low offset voltage: ±125 μV • Low offset voltage drift: ±0.3 μV/°C • Low noise: 10.8 nV/√Hz at 1 kHz • High common-mode rejection: 130 dB • Low bias current: ±10 pA • Rail-to-rail input and output • Wide bandwidth: 4.5 MHz GBW • High slew rate: 21 V/μs • High capacitive load

文件：6.40281 Mbytes 页数：86 Pages

TI

德州仪器

丝印：i40N120；Package：TO-247；IGBT

Feature 1200V,40A VCE(sat)(typ.)=1.9V@VGE=15V,IC=40A IGBT chip in trench FS-technology Low switching losses VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery

文件：930.85 Kbytes 页数：7 Pages

RECTRON

丽正国际

丝印：I4NE60；Package：TO-262；4A 600V N-channel Enhancement Mode Power MOSFET

文件：1.37968 Mbytes 页数：13 Pages

WXDH

东海半导体

丝印：I4NE60；Package：TO-262；4A 600V N-channel Enhancement Mode Power MOSFET

文件：1.37945 Mbytes 页数：13 Pages

WXDH

东海半导体

丝印：I4NE60；Package：TO-262；4A 600V N-channel Enhancement Mode Power MOSFET

文件：1.38412 Mbytes 页数：13 Pages

WXDH

东海半导体

丝印：I4NE60；Package：TO-262；4A 600V N-channel Enhancement Mode Power MOSFET

文件：1.37903 Mbytes 页数：13 Pages

WXDH

东海半导体

丝印：I4NE60；Package：TO-262；4A 600V N-channel Enhancement Mode Power MOSFET

文件：1.37912 Mbytes 页数：13 Pages

WXDH

东海半导体