TMXIT04

Marking：I4；SAW Bandpass Filters | GNSS Receiver

Features 1580MHzcenterfrequency Miniatureceramicpackage(1.4x1.1)forSurfaceMountedTechnology LowInsertionLoss:1.3dBtypicalvaluewithinPassBandWidth1574.42to1576.42MHz NarrowandsharpPassbandcharacteristics Nomatchingnetworkrequiredforoperationat50Ω

INA4230AIYBJR

Marking：I4230；Package：DSBGA；INA4230 48V, Quad Channel, 16-Bit, Current, Voltage, Power, and Energy Monitor With an I2C Interface

1Features •High-sideorlow-sidecurrentsensing •Operatesfroma1.7Vto5.5Vpowersupply •Reportscurrent,voltage,power,andenergy •Programmablefullscalerange:20mV/80mV •Inputcommonmoderange:–0.3Vto48V •Currentmonitoringaccuracy: –16-bitADCresolution –0.75

INA4235AIYBJR

Marking：I4235；Package：DSBGA；INA4235 48V, Quad Channel, 16-Bit, Ultra - Precise, Current, Voltage, Power, and Energy Monitor With an I2C Interface

1Features •High-sideorlow-sidecurrentsensing •Operatesfroma1.7Vto5.5Vpowersupply •Reportscurrent,voltage,power,andenergy •Programmablefullscalerange:20mV/80mV •Inputcommonmoderange:–0.3Vto48V •Currentmonitoringaccuracy: –16-bitADCresolution –0.1%

RI40N1200T7

Marking：i40N120；Package：TO-247；IGBT

Feature 1200V,40A VCE(sat)(typ.)=1.9V@VGE=15V,IC=40A IGBTchipintrenchFS-technology Lowswitchinglosses VCE(sat)withpositivetemperaturecoefficient Fastswitchingandshorttailcurrent Freewheelingdiodeswithfastandsoftreverserecovery

I4NE60

Marking：I4NE60；Package：TO-262；4A 600V N-channel Enhancement Mode Power MOSFET

I4NE60

Marking：I4NE60；Package：TO-262；4A 600V N-channel Enhancement Mode Power MOSFET

I4NE60

Marking：I4NE60；Package：TO-262；4A 600V N-channel Enhancement Mode Power MOSFET

I4NE60

Marking：I4NE60；Package：TO-262；4A 600V N-channel Enhancement Mode Power MOSFET

I4NE60

Marking：I4NE60；Package：TO-262；4A 600V N-channel Enhancement Mode Power MOSFET

I4NE60

Marking：I4NE60；Package：TO-261；4A 600V N-channel Enhancement Mode Power MOSFET