丝印：I****；Package：SOT-26；Ultra Low On-Resistance

Description These P-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The TSOP

文件：204.53 Kbytes 页数：9 Pages

IRF

丝印：I*；Package：SOT-23；EPITAXIAL PLANAR PNP TRANSISTOR (LOW FREQUENCY POWER AMPLIFIER, POWER SWITCHING)

LOW FREQUENCY POWER AMPLIFIER APPLICATION. POWER SWITCHING APPLICATION. FEATURES • High DC Current Gain : hFE=100∼320. • Low Saturation Voltage : VCE(sat)=-0.4V(Max.) (IC=-500mA, IB=-20mA). • Suitable for Driver Stage of Small Motor. • Complementary to KTC3265. • Small Package.

文件：248.51 Kbytes 页数：2 Pages

KEC

KEC(Korea Electronics)

丝印：I*；Package：SOT-23；EPITAXIAL PLANAR PNP TRANSISTOR

文件：356.52 Kbytes 页数：2 Pages

KEC

KEC(Korea Electronics)