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HZU6.2G

SiliconPlanarZenerDiodeforSurgeAbsorption

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

HZU6.2L

SiliconEpitaxialPlanarZenerDiodeforSurgeAbsorb

HITACHI-METALSHitachi Metals, Ltd

日立金属日立金属有限公司

HZU6.2Z

SiliconEpitaxialPlanarZenerDiodeforSurgeAbsorb

Features •Lowcapacitance(C=8.5pFmax)andcanprotectsignallinefromESD. •UltrasmallResinPackage(URP)issuitableforsurfacemountdesign.

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

KDZ6.2B

Zenerdiode

Features Smallpowermoldtype.(PMDU) HighESDtolerance Applications Voltageregulation Construction Siliconepitaxialplanar

ROHMRohm

罗姆罗姆半导体集团

KDZ6.2B

Zenerdiode

Features Smallpowermoldtype.(PMDU) HighESDtolerance Applications Voltageregulation Construction Siliconepitaxialplanar

ROHMRohm

罗姆罗姆半导体集团

KDZ6.2B

Zenerdiode

Features Smallpowermoldtype.(PMDU) HighESDtolerance Applications Voltageregulation Construction Siliconepitaxialplanar

ROHMRohm

罗姆罗姆半导体集团

KDZ6.2B

Zenerdiode

Features Smallpowermoldtype.(PMDU) HighESDtolerance Applications Voltageregulation Construction Siliconepitaxialplanar

ROHMRohm

罗姆罗姆半导体集团

KDZ6.2B

Zenerdiode

Features Smallpowermoldtype.(PMDU) HighESDtolerance Applications Voltageregulation Construction Siliconepitaxialplanar

ROHMRohm

罗姆罗姆半导体集团

KDZ6.2B

Zenerdiode

DIODESDiodes Incorporated

美台半导体

KDZ6.2B

Zenerdiode

Features Smallpowermoldtype.(PMDU) HighESDtolerance Applications Voltageregulation Construction Siliconepitaxialplanar

ROHMRohm

罗姆罗姆半导体集团

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