首页 >HZN6.8Z4MFTATR-EIC>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
SiliconPlanarZenerDiodeforSurgeAbsorb | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
SiliconPlanarZenerDiodeforSurgeAbsorb | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
SiliconPlanarZenerDiodeforSurgeAbsorb | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
SiliconPlanarZenerDiodeforSurgeAbsorb | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
HZN6.8Z4MFA | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
SiliconPlanarZenerDiodeforSurgeAbsorption Features •RKZ6.8Z4KTcanabsorbingsurgewithfourdevicesinonechipconfiguration. •Lowcapacitance(C=4.0pFTyp)enableprotectingsignallinefromESD. •VSON-5Packageissuitableforhighdensitysurfacemounting. | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
SiliconPlanarZenerDiodeforSurgeAbsorption Features •RKZ6.8Z4KTcanabsorbingsurgewithfourdevicesinonechipconfiguration. •Lowcapacitance(C=4.0pFTyp)enableprotectingsignallinefromESD. •VSON-5Packageissuitableforhighdensitysurfacemounting. | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
SiliconPlanarZenerDiodeforSurgeAbsorption Features •RKZ6.8Z4KTcanabsorbingsurgewithfourdevicesinonechipconfiguration. •Lowcapacitance(C=4.0pFTyp)enableprotectingsignallinefromESD. •VSON-5Packageissuitableforhighdensitysurfacemounting. | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
SiliconPlanarZenerDiodeforSurgeAbsorption Features •RKZ6.8Z4MFAKThasfourdevicesinamonolithic,andcanabsorbsurge. •Lowcapacitance(C=4.0pFTyp)andcanprotectESDofsignalline. •VSON-5Packageissuitableforhighdensitysurfacemounting. | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS |
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