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首页>HYG065P03LQ1D>芯片详情
HYG065P03LQ1D_HY/虹扬科技_P-Channel Enhancement Mode MOSFET良思优电子
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产品属性
- 类型
描述
- 制造商编号
:HYG065P03LQ1D
- 生产厂家
:华羿微
- ID@TC=25℃
:-70
- RDS(on) Max 10V(mΩ)
:7.5
- RDS(on) Max 4.5V(mΩ)
:14
- PD@TC=25℃ (W)
:57.7
- Vgs(±V)
:20
- Vth (V)
:-1~-3
- Ciss Typ(pF)
:3595
- Qg Typ(nC)
:86
- Configuration
:Single - P
- Package
:TO-252-2L
- Application
:电池保护板 / DC-DC / 负载开关
- Status
:MP
供应商
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