64 MBit Synchronous DRAM

64 MBit Synchronous DRAM • High Performance: • Fully Synchronous to Positive Clock Edge • 0 to 70°C operating temperature • Four Banks controlled by BA0 & BA1 • Programmable CASLatency: 2 & 3 • Programmable Wrap Sequence: Sequential or Interleave • Programmable Burst Length: 1, 2, 4

文件：678.56 Kbytes 页数：53 Pages

SIEMENS

西门子

64-MBit Synchronous DRAM

文件：402.08 Kbytes 页数：52 Pages

INFINEON

英飞凌

64-MBit Synchronous DRAM

Infineon

英飞凌

64 MBit Synchronous DRAM

64 MBit Synchronous DRAM • High Performance: • Fully Synchronous to Positive Clock Edge • 0 to 70°C operating temperature • Four Banks controlled by BA0 & BA1 • Programmable CASLatency: 2 & 3 • Programmable Wrap Sequence: Sequential or Interleave • Programmable Burst Length: 1, 2, 4

文件：678.56 Kbytes 页数：53 Pages

SIEMENS

西门子

64 MBit Synchronous DRAM

64 MBit Synchronous DRAM • High Performance: • Fully Synchronous to Positive Clock Edge • 0 to 70°C operating temperature • Four Banks controlled by BA0 & BA1 • Programmable CASLatency: 2 & 3 • Programmable Wrap Sequence: Sequential or Interleave • Programmable Burst Length: 1, 2, 4

文件：678.56 Kbytes 页数：53 Pages

SIEMENS

西门子

64 MBit Synchronous DRAM

64 MBit Synchronous DRAM • High Performance: • Fully Synchronous to Positive Clock Edge • 0 to 70°C operating temperature • Four Banks controlled by BA0 & BA1 • Programmable CASLatency: 2 & 3 • Programmable Wrap Sequence: Sequential or Interleave • Programmable Burst Length: 1, 2, 4

文件：678.56 Kbytes 页数：53 Pages

SIEMENS

西门子

64-MBit Synchronous DRAM

The HYB 39S64400/800/160BT are four bank Synchronous DRAM’s organized as 4 banks × 4MBit ×4, 4 banks × 2 MBit ×8 and 4 banks × 1 Mbit ×16 respectively. These synchronous devices achieve high speed data transfer rates by employing a chip architecture that prefects multiple bits and then synchronize

文件：418.58 Kbytes 页数：53 Pages

INFINEON

英飞凌

64-MBit Synchronous DRAM

The HYB 39S64400/800/160BT are four bank Synchronous DRAM’s organized as 4 banks × 4MBit ×4, 4 banks × 2 MBit ×8 and 4 banks × 1 Mbit ×16 respectively. These synchronous devices achieve high speed data transfer rates by employing a chip architecture that prefects multiple bits and then synchronize

文件：418.58 Kbytes 页数：53 Pages

INFINEON

英飞凌

64-MBit Synchronous DRAM

文件：402.08 Kbytes 页数：52 Pages

INFINEON

英飞凌

64-MBit Synchronous DRAM

文件：402.08 Kbytes 页数：52 Pages

INFINEON

英飞凌