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HYB39S64800

64 MBit Synchronous DRAM

64 MBit Synchronous DRAM • High Performance: • Fully Synchronous to Positive Clock Edge • 0 to 70°C operating temperature • Four Banks controlled by BA0 & BA1 • Programmable CASLatency: 2 & 3 • Programmable Wrap Sequence: Sequential or Interleave • Programmable Burst Length: 1, 2, 4

文件:678.56 Kbytes 页数:53 Pages

SIEMENS

西门子

HYB39S64800AT-10

64 MBit Synchronous DRAM

64 MBit Synchronous DRAM • High Performance: • Fully Synchronous to Positive Clock Edge • 0 to 70°C operating temperature • Four Banks controlled by BA0 & BA1 • Programmable CASLatency: 2 & 3 • Programmable Wrap Sequence: Sequential or Interleave • Programmable Burst Length: 1, 2, 4

文件:678.56 Kbytes 页数:53 Pages

SIEMENS

西门子

HYB39S64800AT-8

64 MBit Synchronous DRAM

64 MBit Synchronous DRAM • High Performance: • Fully Synchronous to Positive Clock Edge • 0 to 70°C operating temperature • Four Banks controlled by BA0 & BA1 • Programmable CASLatency: 2 & 3 • Programmable Wrap Sequence: Sequential or Interleave • Programmable Burst Length: 1, 2, 4

文件:678.56 Kbytes 页数:53 Pages

SIEMENS

西门子

HYB39S64800AT-8B

64 MBit Synchronous DRAM

64 MBit Synchronous DRAM • High Performance: • Fully Synchronous to Positive Clock Edge • 0 to 70°C operating temperature • Four Banks controlled by BA0 & BA1 • Programmable CASLatency: 2 & 3 • Programmable Wrap Sequence: Sequential or Interleave • Programmable Burst Length: 1, 2, 4

文件:678.56 Kbytes 页数:53 Pages

SIEMENS

西门子

HYB39S64800BT-7.5

64-MBit Synchronous DRAM

The HYB 39S64400/800/160BT are four bank Synchronous DRAM’s organized as 4 banks × 4MBit ×4, 4 banks × 2 MBit ×8 and 4 banks × 1 Mbit ×16 respectively. These synchronous devices achieve high speed data transfer rates by employing a chip architecture that prefects multiple bits and then synchronize

文件:418.58 Kbytes 页数:53 Pages

INFINEON

英飞凌

HYB39S64800BT-8

64-MBit Synchronous DRAM

The HYB 39S64400/800/160BT are four bank Synchronous DRAM’s organized as 4 banks × 4MBit ×4, 4 banks × 2 MBit ×8 and 4 banks × 1 Mbit ×16 respectively. These synchronous devices achieve high speed data transfer rates by employing a chip architecture that prefects multiple bits and then synchronize

文件:418.58 Kbytes 页数:53 Pages

INFINEON

英飞凌

HYB39S64800CT

64-MBit Synchronous DRAM

文件:402.08 Kbytes 页数:52 Pages

INFINEON

英飞凌

HYB39S64800CT-7.5

64-MBit Synchronous DRAM

文件:402.08 Kbytes 页数:52 Pages

INFINEON

英飞凌

HYB39S64800CT-8

64-MBit Synchronous DRAM

文件:402.08 Kbytes 页数:52 Pages

INFINEON

英飞凌

HYB39S64800CTL

64-MBit Synchronous DRAM

文件:402.08 Kbytes 页数:52 Pages

INFINEON

英飞凌

详细参数

  • 型号:

    HYB39S64800

  • 制造商:

    INFINEON

  • 制造商全称:

    Infineon Technologies AG

  • 功能描述:

    64 MBit Synchronous DRAM

供应商型号品牌批号封装库存备注价格
INFINEON
0030+
TSSOP
1570
全新原装进口自己库存优势
询价
INFINEON
24+
NA
473
询价
SIEMENS
23+
TSOP
5000
原装正品,假一罚十
询价
SIEMENS
24+
TSOP
5000
全现原装公司现货
询价
INFINEON
17+
TSSOP
9988
只做原装进口,自己库存
询价
INFIEON
25+
SMD
2987
绝对全新原装现货供应!
询价
INFIN
23+
NA
1976
专做原装正品,假一罚百!
询价
INFINEON
2026+
TSOP
15884
全新原装现货,可出样品,可开增值税发票
询价
SIEMENS
20+
TSOP
2960
诚信交易大量库存现货
询价
INFINEON/英飞凌
2447
TSOP
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
更多HYB39S64800供应商 更新时间2026-1-28 9:31:00