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型号	下载订购	功能描述	制造商上传企业	LOGO
HY62CT08081E	文件：186.36 Kbytes Page：12 Pages	32Kx8bit CMOS SRAM DESCRIPTION The HY62CT08081E is a high-speed, low power and 32,786 X 8-bits CMOS Static Random Access Memory fabricated using Hynixs high performance CMOS process technology. It is suitable for use in low voltage operation and battery back-up application. This device has a data retention mode tha 文件：186.36 Kbytes 页数：12 Pages	HYNIX 海力士	HYNIX
HY62CT08081E-C	文件：186.36 Kbytes Page：12 Pages	32Kx8bit CMOS SRAM DESCRIPTION The HY62CT08081E is a high-speed, low power and 32,786 X 8-bits CMOS Static Random Access Memory fabricated using Hynixs high performance CMOS process technology. It is suitable for use in low voltage operation and battery back-up application. This device has a data retention mode tha 文件：186.36 Kbytes 页数：12 Pages	HYNIX 海力士	HYNIX
HY62CT08081E-DGC	文件：186.36 Kbytes Page：12 Pages	32Kx8bit CMOS SRAM DESCRIPTION The HY62CT08081E is a high-speed, low power and 32,786 X 8-bits CMOS Static Random Access Memory fabricated using Hynixs high performance CMOS process technology. It is suitable for use in low voltage operation and battery back-up application. This device has a data retention mode tha 文件：186.36 Kbytes 页数：12 Pages	HYNIX 海力士	HYNIX
HY62CT08081E-DGE	文件：186.36 Kbytes Page：12 Pages	32Kx8bit CMOS SRAM DESCRIPTION The HY62CT08081E is a high-speed, low power and 32,786 X 8-bits CMOS Static Random Access Memory fabricated using Hynixs high performance CMOS process technology. It is suitable for use in low voltage operation and battery back-up application. This device has a data retention mode tha 文件：186.36 Kbytes 页数：12 Pages	HYNIX 海力士	HYNIX
HY62CT08081E-DGI	文件：186.36 Kbytes Page：12 Pages	32Kx8bit CMOS SRAM DESCRIPTION The HY62CT08081E is a high-speed, low power and 32,786 X 8-bits CMOS Static Random Access Memory fabricated using Hynixs high performance CMOS process technology. It is suitable for use in low voltage operation and battery back-up application. This device has a data retention mode tha 文件：186.36 Kbytes 页数：12 Pages	HYNIX 海力士	HYNIX
HY62CT08081E-DPC	文件：186.36 Kbytes Page：12 Pages	32Kx8bit CMOS SRAM DESCRIPTION The HY62CT08081E is a high-speed, low power and 32,786 X 8-bits CMOS Static Random Access Memory fabricated using Hynixs high performance CMOS process technology. It is suitable for use in low voltage operation and battery back-up application. This device has a data retention mode tha 文件：186.36 Kbytes 页数：12 Pages	HYNIX 海力士	HYNIX
HY62CT08081E-DPE	文件：186.36 Kbytes Page：12 Pages	32Kx8bit CMOS SRAM DESCRIPTION The HY62CT08081E is a high-speed, low power and 32,786 X 8-bits CMOS Static Random Access Memory fabricated using Hynixs high performance CMOS process technology. It is suitable for use in low voltage operation and battery back-up application. This device has a data retention mode tha 文件：186.36 Kbytes 页数：12 Pages	HYNIX 海力士	HYNIX
HY62CT08081E-DPI	文件：186.36 Kbytes Page：12 Pages	32Kx8bit CMOS SRAM DESCRIPTION The HY62CT08081E is a high-speed, low power and 32,786 X 8-bits CMOS Static Random Access Memory fabricated using Hynixs high performance CMOS process technology. It is suitable for use in low voltage operation and battery back-up application. This device has a data retention mode tha 文件：186.36 Kbytes 页数：12 Pages	HYNIX 海力士	HYNIX
HY62CT08081E-DTC	文件：186.36 Kbytes Page：12 Pages	32Kx8bit CMOS SRAM DESCRIPTION The HY62CT08081E is a high-speed, low power and 32,786 X 8-bits CMOS Static Random Access Memory fabricated using Hynixs high performance CMOS process technology. It is suitable for use in low voltage operation and battery back-up application. This device has a data retention mode tha 文件：186.36 Kbytes 页数：12 Pages	HYNIX 海力士	HYNIX
HY62CT08081E-DTE	文件：186.36 Kbytes Page：12 Pages	32Kx8bit CMOS SRAM DESCRIPTION The HY62CT08081E is a high-speed, low power and 32,786 X 8-bits CMOS Static Random Access Memory fabricated using Hynixs high performance CMOS process technology. It is suitable for use in low voltage operation and battery back-up application. This device has a data retention mode tha 文件：186.36 Kbytes 页数：12 Pages	HYNIX 海力士	HYNIX

详细参数

型号：
HY62CT08081E
制造商：
HYNIX
制造商全称：
Hynix Semiconductor
功能描述：
32Kx8bit CMOS SRAM

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市金华微盛电子有限公司	HY62CT08081E	HY	19+	DIP	19175		询价
深圳市卓越微芯电子有限公司	HY62CT08081E		25+		494	百分百原装正品真实公司现货库存本公司只做原装可	询价
京海半导体(深圳)有限公司	HY62CT08081E	HY	25+	DIP	10000	原装现货假一罚十	询价
深圳市胜彬电子有限公司	HY62CT08081E	HYNIX	22+	SOP	8000	原装正品支持实单	询价
深圳市一线半导体有限公司	HY62CT08081E-DG55C(HY62256BLLJ-55)	HYUNDAI	24+	SOP	478		询价
齐创科技(上海,北京,青岛)有限公司	HY62CT08081E-DP70C	HY	23+	DIP	5000	原装正品,假一罚十	询价
深圳市欧立现代科技有限公司	HY62CT08081EDP70C	HY	24+	原装	6980	原装现货,可开13%税票	询价
上海意淼电子科技有限公司	HY62CT08081E-DP70/6264	STMicroelectronics	23+	PLCC	6500	全新原装假一赔十	询价
深圳市华来深电子有限公司	HY62CT08081E-DP70C	HYNIX	23+	DIP	8560	受权代理!全新原装现货特价热卖!	询价
深圳市威尔健半导体有限公司	HY62CT08081E-DP70C	HY	23+	DIP	50000	全新原装正品现货,支持订货	询价

更多HY62CT08081E供应商更新时间2026-1-29 16:04:00

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