32Kx8bit CMOS SRAM

DESCRIPTION The HY62CT08081E is a high-speed, low power and 32,786 X 8-bits CMOS Static Random Access Memory fabricated using Hynixs high performance CMOS process technology. It is suitable for use in low voltage operation and battery back-up application. This device has a data retention mode tha

文件：186.36 Kbytes 页数：12 Pages

Hynix

海力士

32Kx8bit CMOS SRAM

DESCRIPTION The HY62CT08081E is a high-speed, low power and 32,786 X 8-bits CMOS Static Random Access Memory fabricated using Hynixs high performance CMOS process technology. It is suitable for use in low voltage operation and battery back-up application. This device has a data retention mode tha

文件：186.36 Kbytes 页数：12 Pages

Hynix

海力士

32Kx8bit CMOS SRAM

DESCRIPTION The HY62CT08081E is a high-speed, low power and 32,786 X 8-bits CMOS Static Random Access Memory fabricated using Hynixs high performance CMOS process technology. It is suitable for use in low voltage operation and battery back-up application. This device has a data retention mode tha

文件：186.36 Kbytes 页数：12 Pages

Hynix

海力士

32Kx8bit CMOS SRAM

DESCRIPTION The HY62CT08081E is a high-speed, low power and 32,786 X 8-bits CMOS Static Random Access Memory fabricated using Hynixs high performance CMOS process technology. It is suitable for use in low voltage operation and battery back-up application. This device has a data retention mode tha

文件：186.36 Kbytes 页数：12 Pages

Hynix

海力士