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HY57V641620ELTP-H

64MbSynchronousDRAMbasedon1Mx4Bankx16I/O

DESCRIPTION TheHynixHY57V641620E(L/S)T(P)seriesisa67,108,864bitCMOSSynchronousDRAM,ideallysuitedforthememoryapplicationswhichrequirewidedataI/Oandhighbandwidth.HY57V641620E(L/S)T(P)isorganizedas4banksof1,048,576x16. HY57V641620E(L/S)T(P)isofferingf

HynixHynix Semiconductor

SK海力士海力士半导体

HY57V641620ESTP-H

64MbSynchronousDRAMbasedon1Mx4Bankx16I/O

DESCRIPTION TheHynixHY57V641620E(L/S)T(P)seriesisa67,108,864bitCMOSSynchronousDRAM,ideallysuitedforthememoryapplicationswhichrequirewidedataI/Oandhighbandwidth.HY57V641620E(L/S)T(P)isorganizedas4banksof1,048,576x16. HY57V641620E(L/S)T(P)isofferingf

HynixHynix Semiconductor

SK海力士海力士半导体

HY57V641620ET

64MbSynchronousDRAMbasedon1Mx4Bankx16I/O

DESCRIPTION TheHynixHY57V641620E(L/S)T(P)seriesisa67,108,864bitCMOSSynchronousDRAM,ideallysuitedforthememoryapplicationswhichrequirewidedataI/Oandhighbandwidth.HY57V641620E(L/S)T(P)isorganizedas4banksof1,048,576x16. HY57V641620E(L/S)T(P)isofferingf

HynixHynix Semiconductor

SK海力士海力士半导体

HY57V641620ET-H

64MbSynchronousDRAMbasedon1Mx4Bankx16I/O

DESCRIPTION TheHynixHY57V641620E(L/S)T(P)seriesisa67,108,864bitCMOSSynchronousDRAM,ideallysuitedforthememoryapplicationswhichrequirewidedataI/Oandhighbandwidth.HY57V641620E(L/S)T(P)isorganizedas4banksof1,048,576x16. HY57V641620E(L/S)T(P)isofferingf

HynixHynix Semiconductor

SK海力士海力士半导体

HY57V641620HG

4Banksx1Mx16BitSynchronousDRAM

DESCRIPTION TheHynixHY57V641620HGisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V641620HGisorganizedas4banksof1,048,576x16.HY57V641620HGisofferingfullysynchronousoperationrefere

HynixHynix Semiconductor

SK海力士海力士半导体

HY57V641620HG-I

4Banksx1Mx16BitSynchronousDRAM

DESCRIPTION TheHynixHY57V641620HGisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedfortheMobileapplicationsrwhichrequirelowpowerconsumptionandextendedtemperaturerange.HY57V641620HGisorganizedas4banksof1,048,576x16.HY57V641620HGisofferingfullysynchronousopera

HynixHynix Semiconductor

SK海力士海力士半导体

HY57V641620HGLT-HI

4Banksx1Mx16BitSynchronousDRAM

DESCRIPTION TheHynixHY57V641620HGisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedfortheMobileapplicationsrwhichrequirelowpowerconsumptionandextendedtemperaturerange.HY57V641620HGisorganizedas4banksof1,048,576x16.HY57V641620HGisofferingfullysynchronousopera

HynixHynix Semiconductor

SK海力士海力士半导体

HY57V641620HGLT-KI

4Banksx1Mx16BitSynchronousDRAM

DESCRIPTION TheHynixHY57V641620HGisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedfortheMobileapplicationsrwhichrequirelowpowerconsumptionandextendedtemperaturerange.HY57V641620HGisorganizedas4banksof1,048,576x16.HY57V641620HGisofferingfullysynchronousopera

HynixHynix Semiconductor

SK海力士海力士半导体

HY57V641620HGLT-P

4Banksx1Mx16BitSynchronousDRAM

DESCRIPTION TheHynixHY57V641620HGisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V641620HGisorganizedas4banksof1,048,576x16.HY57V641620HGisofferingfullysynchronousoperationrefere

HynixHynix Semiconductor

SK海力士海力士半导体

HY57V641620HGLT-PI

4Banksx1Mx16BitSynchronousDRAM

DESCRIPTION TheHynixHY57V641620HGisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedfortheMobileapplicationsrwhichrequirelowpowerconsumptionandextendedtemperaturerange.HY57V641620HGisorganizedas4banksof1,048,576x16.HY57V641620HGisofferingfullysynchronousopera

HynixHynix Semiconductor

SK海力士海力士半导体

HY57V641620HGLT-SI

4Banksx1Mx16BitSynchronousDRAM

DESCRIPTION TheHynixHY57V641620HGisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedfortheMobileapplicationsrwhichrequirelowpowerconsumptionandextendedtemperaturerange.HY57V641620HGisorganizedas4banksof1,048,576x16.HY57V641620HGisofferingfullysynchronousopera

HynixHynix Semiconductor

SK海力士海力士半导体

HY57V641620HGT-H

4Banksx1Mx16BitSynchronousDRAM

DESCRIPTION TheHynixHY57V641620HGisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V641620HGisorganizedas4banksof1,048,576x16.HY57V641620HGisofferingfullysynchronousoperationrefere

HynixHynix Semiconductor

SK海力士海力士半导体

HY57V641620HGT-HI

4Banksx1Mx16BitSynchronousDRAM

DESCRIPTION TheHynixHY57V641620HGisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedfortheMobileapplicationsrwhichrequirelowpowerconsumptionandextendedtemperaturerange.HY57V641620HGisorganizedas4banksof1,048,576x16.HY57V641620HGisofferingfullysynchronousopera

HynixHynix Semiconductor

SK海力士海力士半导体

HY57V641620HGT-K

4Banksx1Mx16BitSynchronousDRAM

DESCRIPTION TheHynixHY57V641620HGisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V641620HGisorganizedas4banksof1,048,576x16.HY57V641620HGisofferingfullysynchronousoperationrefere

HynixHynix Semiconductor

SK海力士海力士半导体

HY57V641620HGT-KI

4Banksx1Mx16BitSynchronousDRAM

DESCRIPTION TheHynixHY57V641620HGisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedfortheMobileapplicationsrwhichrequirelowpowerconsumptionandextendedtemperaturerange.HY57V641620HGisorganizedas4banksof1,048,576x16.HY57V641620HGisofferingfullysynchronousopera

HynixHynix Semiconductor

SK海力士海力士半导体

HY57V641620HGT-P

4Banksx1Mx16BitSynchronousDRAM

DESCRIPTION TheHynixHY57V641620HGisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V641620HGisorganizedas4banksof1,048,576x16.HY57V641620HGisofferingfullysynchronousoperationrefere

HynixHynix Semiconductor

SK海力士海力士半导体

HY57V641620HGT-PI

4Banksx1Mx16BitSynchronousDRAM

DESCRIPTION TheHynixHY57V641620HGisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedfortheMobileapplicationsrwhichrequirelowpowerconsumptionandextendedtemperaturerange.HY57V641620HGisorganizedas4banksof1,048,576x16.HY57V641620HGisofferingfullysynchronousopera

HynixHynix Semiconductor

SK海力士海力士半导体

HY57V641620HGT-S

4Banksx1Mx16BitSynchronousDRAM

DESCRIPTION TheHynixHY57V641620HGisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V641620HGisorganizedas4banksof1,048,576x16.HY57V641620HGisofferingfullysynchronousoperationrefere

HynixHynix Semiconductor

SK海力士海力士半导体

HY57V641620HGT-SI

4Banksx1Mx16BitSynchronousDRAM

DESCRIPTION TheHynixHY57V641620HGisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedfortheMobileapplicationsrwhichrequirelowpowerconsumptionandextendedtemperaturerange.HY57V641620HGisorganizedas4banksof1,048,576x16.HY57V641620HGisofferingfullysynchronousopera

HynixHynix Semiconductor

SK海力士海力士半导体

供应商型号品牌批号封装库存备注价格
HY
22+
TSOP
2987
只售原装自家现货!诚信经营!欢迎来电!
询价
H-Y-N-I-X
21+ROHS
TSOP
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
SKHYNIX
2023+
TSOP
80000
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
询价
SKHYNIX
21+
TSOP
35200
一级代理/放心采购
询价
2023+
3000
进口原装现货
询价
HY
2023+
TSSOP
16800
芯为科技只有原装
询价
HY
04+
TSOP
217
询价
HYNIX
23+
SSOP-14P
5000
原装正品,假一罚十
询价
HYNIX
22+23+
TSSOP54
29283
绝对原装正品全新进口深圳现货
询价
HYNIX(海力士)
2117+
TSSOP-54
315000
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
更多HY57V641620HGT-H(PRC供应商 更新时间2024-6-20 16:17:00