2 Banks x 512K x 16 Bit Synchronous DRAM

DESCRIPTION\nTHE Hynix HY57V161610E is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory and graphic applications which require large memory density and high bandwidth. HY57V161610E is organized as 2banks of 524,288x16. HY57V161610E is offering fully synchronous operation r • Single 3.0V to 3.6V power supply\n• All device pins are compatible with LVTTL interface\n• JEDEC standard 400mil 50pin TSOP-II with 0.8mm of pin pitch\n• All inputs and outputs referenced to positive edge of system clock\n• Data mask function by UDQM/LDQM\n• Internal two banks operation\n• Auto re;

SK hynix

海力士

2 Banks x 512K x 16 Bit Synchronous DRAM

DESCRIPTION THE Hynix HY57V161610E is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory and graphic applications which require large memory density and high bandwidth. HY57V161610E is organized as 2banks of 524,288x16. HY57V161610E is offering fully synchronous operati

文件：215.67 Kbytes 页数：13 Pages

Hynix

海力士

2 banks x 512K x 16 bit synchronous DRAM, LVTTL, 100MHz

SK hynix

海力士

2 Banks x 512K x 16 Bit Synchronous DRAM

SK hynix

海力士