2 Banks x 512K x 16 Bit Synchronous DRAM

DESCRIPTION THE Hyundai HY57V161610D is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory and graphic applications which require large memory density and high bandwidth. HY57V161610D is organized as 2banks of 524,288x16. HY57V161610D is offering fully sync

文件：73.19 Kbytes 页数：13 Pages

Hynix

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2 Banks x 512K x 16 Bit Synchronous DRAM

DESCRIPTION THE Hynix HY57V161610D is a 16,777,216-bits CMOS Synchronous DRAM, ideallysuited for the Mobile applications which require low power consumption and industrial temperature range. HY57V161610D is organized as 2banks of 524,288x16. HY57V161610D is offering fully synchrono

文件：574.35 Kbytes 页数：11 Pages

Hynix

海力士

2 Banks x 512K x 16 Bit Synchronous DRAM

DESCRIPTION THE Hyundai HY57V161610D is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory and graphic applications which require large memory density and high bandwidth. HY57V161610D is organized as 2banks of 524,288x16. HY57V161610D is offering fully sync

文件：73.19 Kbytes 页数：13 Pages

Hynix

海力士

2 Banks x 512K x 16 Bit Synchronous DRAM

DESCRIPTION THE Hynix HY57V161610E is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory and graphic applications which require large memory density and high bandwidth. HY57V161610E is organized as 2banks of 524,288x16. FEATURES • Single 3.0V to 3.6V power supply • All

文件：181.48 Kbytes 页数：13 Pages

Hynix

海力士

2 Banks x 512K x 16 Bit Synchronous DRAM

DESCRIPTION THE Hynix HY57V161610E is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory and graphic applications which require large memory density and high bandwidth. HY57V161610E is organized as 2banks of 524,288x16. FEATURES • Single 3.0V to 3.6V power supply • All

文件：181.48 Kbytes 页数：13 Pages

Hynix

海力士

2 Banks x 512K x 16 Bit Synchronous DRAM

DESCRIPTION THE Hynix HY57V161610E is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory and graphic applications which require large memory density and high bandwidth. HY57V161610E is organized as 2banks of 524,288x16. FEATURES • Single 3.0V to 3.6V power supply

文件：482.25 Kbytes 页数：13 Pages

Hynix

海力士

2 Banks x 512K x 16 Bit Synchronous DRAM

DESCRIPTION THE Hynix HY57V161610E is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory and graphic applications which require large memory density and high bandwidth. HY57V161610E is organized as 2banks of 524,288x16. FEATURES • Single 3.0V to 3.6V power supply • All

文件：181.48 Kbytes 页数：13 Pages

Hynix

海力士

2 Banks x 512K x 16 Bit Synchronous DRAM

DESCRIPTION THE Hynix HY57V161610E is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory and graphic applications which require large memory density and high bandwidth. HY57V161610E is organized as 2banks of 524,288x16. FEATURES • Single 3.0V to 3.6V power supply

文件：482.25 Kbytes 页数：13 Pages

Hynix

海力士

2 Banks x 512K x 16 Bit Synchronous DRAM

DESCRIPTION THE Hynix HY57V161610E is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory and graphic applications which require large memory density and high bandwidth. HY57V161610E is organized as 2banks of 524,288x16. FEATURES • Single 3.0V to 3.6V power supply • All

文件：181.48 Kbytes 页数：13 Pages

Hynix

海力士

2 Banks x 512K x 16 Bit Synchronous DRAM

DESCRIPTION THE Hynix HY57V161610E is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory and graphic applications which require large memory density and high bandwidth. HY57V161610E is organized as 2banks of 524,288x16. FEATURES • Single 3.0V to 3.6V power supply • All

文件：181.48 Kbytes 页数：13 Pages

Hynix

海力士