| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
HY2N60M | 600V / 2.0A N-Channel Enhancement Mode MOSFET | HYyueqing hongyi electronics co.,ltd 宏一乐清市宏一电子有限公司 |  | |
2Amps,600VoltsN-CHANNELMOSFET DESCRIPTION TheUTC2N60isahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsin | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 |  | ||
N2Amps竊?00VoltsN-ChannelMOSFET Description TheET2N60N-CeannelenhancementmodesilicongatepowerMOSFETisdesignedforhighvoltage,highspeedpowerswitchingapplicationssuchasswitchingregulators,switchingconverters,solenoid,motordrivers,relaydrivers. Features ●RDS(ON)=5.00Ω@VGS=10V ●Lowgatecharge | ESTEKEstek Electronics Co. Ltd Estek Electronics Co. Ltd |  | ||
2Amps,600/650VoltsN-CHANNELPOWERMOSFET TheUTC2N60isahighvoltageMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsinpowerupplies,PWM | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | | ||
600VN-ChannelPowerMOSFET Features ●RDS(ON) | DYELECDIYI Electronic Technology Co., Ltd. 迪一电子山东迪一电子科技有限公司 |  | ||
2A600VN-channelEnhancementModePowerMOSFET | WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd 东海半导体江苏东海半导体科技有限公司 |  | ||
2A600VN-channelEnhancementModePowerMOSFET | WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd 东海半导体江苏东海半导体科技有限公司 | | ||
2A600VN-channelEnhancementModePowerMOSFET | WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd 东海半导体江苏东海半导体科技有限公司 | | ||
2A600VN-channelEnhancementModePowerMOSFET | WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd 东海半导体江苏东海半导体科技有限公司 | | ||
2A600VN-channelEnhancementModePowerMOSFET | WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd 东海半导体江苏东海半导体科技有限公司 | | ||
2A600VN-channelEnhancementModePowerMOSFET | WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd 东海半导体江苏东海半导体科技有限公司 | | ||
PowerMOSFET FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •ComplianttoRoHSdirective2002/95/EC | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 |  | ||
2A,600VN-CHANNELPOWERMOSFET | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | | ||
2Amps,600VoltsN-CHANNELMOSFET FEATURE ●2A,600V,RDS(ON)=4Ω@VGS=10V/1A ●Lowgatecharge ●LowCiss ●Fastswitching ●100avalanchetested ●Improveddv/dtcapability | CHONGQINGCHONGQING PINGYANG ELECTRONICS CO.,LTD 重庆平伟实业重庆平伟实业股份有限公司 |  | ||
TO-251Plastic-EncapsulateMOSFET N-ChannelMOSFET Features ●RobustHighVoltageTermination ●AvalancheEnergySpecified ●DiodeisCharacterizedforUseinBridgeCircuits ●IDSSandVDS(on)SpecifiedatElevatedTemperature | HDSEMIJiangsu High diode Semiconductor Co., Ltd 苏海德半导体苏海德半导体有限公司 |  | ||
N-CHANNELMOSFET DESCRIPTION 2N602N65isahighvoltageMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsinpowersu | ZSELECZibo Seno Electronic Engineering Co.,Ltd 淄博圣诺电子淄博圣诺电子工程有限公司 |  | ||
N-ChannelPowerMOSFET DESCRIPTION Theyaredesignedforuseinapplicationssuchasswitchedmodepowersupplies,DCtoDCconverters,PWMmotorcontrols,bridgecircuitsandgeneralpurposeswitchingapplications. TheNell2N60isathree-terminalsilicondevicewithcurrentconductioncapabilityof2A,fastswitchi | NELLSEMINell Semiconductor Co., Ltd 尼爾半導體尼爾半導體股份有限公司 |  | ||
FastSwitching •FEATURES •Draincurrent:ID=2A@TC=25℃ •Drainsourcevoltage:VDSS=600V(Min) •Staticdrain-sourceon-resistance:RDS(on)=5.0Ω(Max) •Fastswitching •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperationz •APPLICATIONS •Switch | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | ||
N-CHANNELMOSFET | ARTSCHIP ARTSCHIP ELECTRONICS CO.,LMITED. |  |
详细参数
- 型号：
HY2N60M
- 制造商：
HY
- 制造商全称：
HY ELECTRONIC CORP.
- 功能描述：
600V/2.0A N-Channel Enhancement Mode MOSFET
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
HY |
22+ |
SOT23-3L |
30000 |
只做原装 原厂授权代理证书 |
询价 | ||
HUAYI |
24+25+/26+27+ |
SOT-23-3 |
78800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 | ||
BOOMELE(博穆精密) |
2308+ |
390456 |
一级代理,原装正品,公司现货! |
询价 | |||
BOOMELE(博穆精密) |
22+ |
连接器 |
123000 |
主打连接器供应,现货库存 |
询价 | ||
SILERGY/矽力杰 |
23+ |
SOT23-6 |
15000 |
全新原装现货,价格优势 |
询价 | ||
HY |
23+ |
SOP8 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
HY |
DIP |
7500 |
询价 | ||||
HY原装 |
22+23+ |
DIP |
27696 |
绝对原装正品全新进口深圳现货 |
询价 | ||
HYCOM |
07+ |
SMD |
700 |
原厂原装仓库现货,欢迎咨询 |
询价 | ||
HY |
2801+ |
DIP |
14930 |
只做原装现货、主营光电元器件/门市现货 |
询价 |
相关规格书
更多- HY2N65D
- HY2N65T
- HY3003
- HY3003-3
- HY3020
- HY30FR060P
- HY310_1
- HY-3192
- HY-3202
- HY3-2405E-9
- HY330_1
- HY333
- HY38-6B8-021-000
- HY38-6E8-021-211
- HY404XX01
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- HY5001-025Z
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- HY5001-035M
- HY5001-035Z
- HY5003
- HY50-P
- HY50-P_06
- HY5100-010M
- HY5100-010Z
- HY5100-012R
- HY5100-014M
- HY5100-014Z
- HY5116100AJ-50
- HY5116100AJ-70
- HY5116100AR-60
- HY5116100ASLJ-50
- HY5116100ASLJ-70
- HY5116400AJ-50
- HY5116400AJ-70
- HY5116400AR-60
- HY5116400ASLJ-50
相关库存
更多- HY2N65M
- HY2N70D
- HY3003-2
- HY3010
- HY-3025
- HY310
- HY-3189
- HY-32
- HY-3204
- HY330
- HY3316
- HY37-6E6-011-0211
- HY38-6E8-021-000
- HY402XX01
- HY41PN110AC
- HY41PN12DC
- HY41PN24AC
- HY42XX110AC
- HY42XX230AC
- HY4N60D
- HY4N65D
- HY4N70D
- HY-5
- HY5001-025R
- HY5001-030M
- HY5001-030Z
- HY5001-035R
- HY5001-040M
- HY50P
- HY50-P/SP1
- HY51
- HY5100-010R
- HY5100-012M
- HY5100-012Z
- HY5100-014R
- HY5100-016M
- HY5116100AJ-60
- HY5116100AR-50
- HY5116100AR-70
- HY5116100ASLJ-60
- HY5116100ASLR-50
- HY5116400AJ-60
- HY5116400AR-50
- HY5116400AR-70
- HY5116400ASLJ-60
